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IRF (International Rectifier) HEXFET N-Channel MOSFET, 60 V Vdss, 79 A continuous drain (Tc), 8.4 mOhm max Rds(on) at 10 V, 69 nC gate charge, TO-220AB, -55°C to 175°C junction temperature.

IRF1405ZPBF, HEXFET series, N-channel MOSFET, 55V Vdss, 75A Id, 4.9 mOhm Rds(on) at 10V, 180 nC Qg, TO-220AB through-hole, -55 to 175°C.

Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V Vdss, 31 A Id, 70 mOhm Rds(on) at 10 V, 67 nC Qg, TO-247-3 through-hole, -55 to 150 °C.

Infineon CoolMOS™ C7 series, IPW65R019C7FKSA1, N-Channel MOSFET, 650 V Vdss, 75 A Id, 19 mOhm Rds(on) at 58.3 A, 10 V, 215 nC Qg, TO-247-3 (PG-TO247-3), Through Hole, -55°C to 150°C junction.

STMicroelectronics SuperMESH™ STP15NK50Z, N-Channel MOSFET, 500 Vdss, 14 A Id, 340 mOhm Rds(on) @ 10 V, TO-220-3, -50°C to 150°C junction.

Nexperia PSMN7R8-120ESQ, N-channel MOSFET, 120 V Vdss, 7.9 mOhm Rds(on) max at 25 A, 70 A continuous drain, TO-262-3 (I2PAK) through-hole, -55 to 175 °C.

STMicroelectronics STripFET™ II STP60NF06L, N-Channel MOSFET, 60 V Vdss, 60 A Id, 14 mOhm Rds(on) at 10 V, 66 nC Qg, TO-220-3, -65 to 175 °C.

Infineon OptiMOS BSC200P03LSG, P-Channel Power MOSFET, 30 V Vdss, 12.5 A Id, 20 mOhm Rds(on) at 10 V, 8-PowerTDFN (PG-TDSON-8-6), -55 to 150 °C.

Infineon CoolSiC™+ series, IDW15E65D2, standard diode, 650 V reverse, 30 A average rectified, 47 ns reverse recovery, TO-247-3 through-hole package, -40°C to 175°C junction temperature.

STMicroelectronics SuperMESH N-channel MOSFET, STP9NK50Z, 500 V drain-source, 7.2 A continuous drain, 850 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STripFET™ II STP40NF10, N-channel MOSFET, 100 V Vdss, 50 A continuous drain, 28 mOhm Rds(on) max at 25 A, 10 V gate drive, TO-220-3 package, through-hole mount.

STMicroelectronics STP11NM60ND, N-Channel MOSFET, FDmesh™ II series, 600 V drain-source, 10 A continuous drain at 25°C, 450 mΩ Rds(on) at 5 A / 10 V, 30 nC gate charge, TO-220-3 through-hole package, active lifecycle.

STMicroelectronics STP80NF10, STripFET™ II, N-Channel MOSFET, 100V Vdss, 80A Id, 15mOhm RDS(on) @ 10V, TO-220-3, -55°C to 175°C.

STMicroelectronics MDmesh™ N-Channel MOSFET, 650 V drain-to-source, 8 A continuous drain current, 1 Ohm Rds(on) at 10 V gate drive, 18 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-source, 109 A continuous drain current, 17 mOhm max on-resistance at 10 V gate drive, PG-TO247-4 through-hole package, -55 to 150 °C junction temperature.

IRF1104PBF, International Rectifier HEXFET series, N-channel MOSFET, 40V Vdss, 100A Id, 9mOhm Rds(on) at 60A/10V, 93nC Qg, TO-220AB through-hole, -55 to 175°C.

Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V drain-source, 9 A continuous drain at 25 °C, 280 mOhm Rds(on) at 10 V, 18 nC gate charge, TO-220-3, -55 °C to 150 °C.

Infineon HEXFET® IRFB4127PBF, N-Channel MOSFET, 200 V Vdss, 76 A Id, 20 mOhm Rds(on) at 44 A, 10 V, 150 nC Qg, TO-220AB through-hole, -55°C to 175°C.

STMicroelectronics L7912CV, -12V fixed negative linear voltage regulator, 1.5A output, TO-220-3 through-hole package, PSRR 60dB (120Hz), dropout 1.1V typ at 1A, operating temperature 0°C to 125°C.

STMicroelectronics STW42N65M5, MDmesh™ V N-Channel MOSFET, 650 V Vdss, 33 A Id, 79 mOhm Rds(on), TO-247-3, Through Hole, 150°C junction.

STMicroelectronics SuperMESH N-Channel MOSFET, STP10NK60ZFP, 600V Vdss, 10A Id, 750mOhm Rds(on), 70nC Qg, TO-220-3 Full Pack, -55°C to 150°C.

STMicroelectronics STPS10L25D Schottky rectifier, 25 V DC reverse, 10 A average rectified, 460 mV forward drop at 10 A, 150°C max junction, TO-220AC through-hole package.

Infineon OptiMOS™3 IPA126N10N3G, N-Channel MOSFET, 100 V Vdss, 35 A Id, 12.6 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 175 °C.

STMicroelectronics STripFET™ II N-Channel MOSFET, 250 V, 17 A, 165 mOhm, TO-220-3, Through Hole, Tube.

Infineon CoolSiC™+ IDH16G120C5XKSA1, Silicon Carbide Schottky Diode, 1200 V reverse voltage, 16 A average rectified current, 0 ns reverse recovery time, TO-220-2 through-hole package, -55°C to 175°C junction temperature.

STMicroelectronics L7805ABP, 5V fixed positive linear voltage regulator, 1.5A output, 35V input max, 2V dropout at 1A, 68dB PSRR at 120Hz, TO-220-3 Full Pack, through hole, -40°C~125°C.

Texas Instruments SIMPLE SWITCHER® series, LM2576T-3.3/NOPB, step-down (buck) regulator, fixed 3.3V output, 3A output current, 52kHz switching frequency, through-hole TO-220-5 package.

STMicroelectronics L7805CT, positive fixed 5V linear regulator, 1.5A output, 62dB PSRR at 120Hz, 2V dropout at 1A, TO-204AA (TO-3) through-hole package, 0°C to 125°C operating range.

Texas Instruments LM2931CT/LF04 adjustable positive LDO voltage regulator, 100mA output, 0.3V dropout at 100mA, 55dB PSRR at 120Hz, TO-220-3 through-hole package, -40°C to 85°C operating temperature.

STMicroelectronics FDmesh™ II N-Channel MOSFET, 600 V drain-source voltage, 13 A continuous drain current, 290 mOhm Rds(on) at 10 V, 34 nC gate charge, TO-220 Full Pack package.

STMicroelectronics MDmesh™ II series, STFI13NM60N, N-Channel MOSFET, 600 Vdss, 11 A continuous drain, 360 mOhm Rds(on) at 10 V, TO-262-3 Full Pack (I2PAKFP), through-hole mount.

STMicroelectronics STripFET™ II series, STP76NF75, N-Channel MOSFET, 75 V Vdss, 80 A continuous drain, 11 mOhm Rds(on) at 40 A, 10 V gate drive, 160 nC gate charge, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

STMicroelectronics STripFET™ II series, STP80NF06, N-Channel MOSFET, 60 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 10 V, 150 nC gate charge, TO-220-3 through-hole package.

STMicroelectronics STPS30170DJF-TR, Schottky Diode, 170 V Vr, 30 A Io, 950 mV Vf @ 30 A, 150°C Tj max, 8-PowerVDFN PowerFlat 5x6, Surface Mount, Tape & Reel.

Maxim Integrated MAX9703ETJ+T, Class D mono audio amplifier, 18W x 1 @ 16Ohm, 10V ~ 25V supply, -40°C ~ 85°C, 32-TQFN (5x5) exposed pad, Surface Mount.

Infineon ICE2QR4765ZXKLA1 CoolMOS™, CoolSET™-Q1 offline flyback switch, 31 W, 650 V breakdown, 52 kHz, PG-DIP-7-1 through-hole, -40°C to 150°C TJ.

Infineon OptiMOS™ N-Channel MOSFET, 120 V drain-source, 120 A continuous drain, 4.1 mOhm max on-resistance at 100 A, 10 V gate drive, PG-TO262-3 through-hole package, -55 to 175 °C junction temperature.

Infineon Technologies CoolMOS™ P6 series, N-Channel MOSFET, 600 V drain-source, 20.2 A continuous drain, 190 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole, tube.

Infineon TrenchStop™ IGBT, IHW30N160R5XKSA1, Trench Field Stop, 1600V Vces, 60A Ic, 90A pulsed, 2.15V Vce(on) @ 15V/30A, 205nC gate charge, 263W, TO-247-3, -40 to 175°C.

Infineon OptiMOS IPD053N06NATMA1, N-Channel MOSFET, 60 Vdss, 5.3 mOhm Rds(on) at 10 V, 45 A continuous drain, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

Infineon TrenchStop IGBT, IGB10N60TATMA1, NPT Trench Field Stop, 600 V Vces, 20 A Ic, 110 W max, 62 nC gate charge, 2.05 V Vce(on) at 15 V/10 A, -40 to 175 °C TJ, PG-TO263-3-2 package.

Infineon OptiMOS™ IPP100N12S305AKSA1, N-Channel MOSFET, 120 V drain-source, 100 A continuous, 5.1 mOhm Rds(on) at 10 V, TO-220-3, AEC-Q101 qualified, -55°C to 175°C junction temperature.

Infineon OptiMOS N-Channel MOSFET, 80 V, 60 A (Tc), 5.7 mOhm @ 60 A, 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 175°C.

Infineon CoolMOS™ P7 N-Channel MOSFET, IPAN70R750P7SXKSA1, 700 V Vdss, 6.5 A Id, 750 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -40°C to 150°C junction temperature.

Infineon HEXFET® IRF1404ZPBF, N-Channel MOSFET, 40 V Vdss, 180 A Id, 3.7 mOhm Rds(on) @ 75 A, 10 V, 150 nC Qg, TO-220AB, -55°C to 175°C.

Infineon CoolMOS™ CE, N-Channel MOSFET, 800 V Vdss, 1.9 A Id at 25°C, 2.8 Ohm Rds(on) at 1.1 A, 10 V, 12 nC gate charge, ±20 V Vgs, TO-252-3 (DPak), -55°C to 150°C TJ.

Infineon CoolMOS™ P7 series, IPA60R600P7SXKSA1, N-Channel MOSFET, 600 V Vdss, 6 A Id, 600 mOhm Rds(on), 9 nC Qg, PG-TO220-FP package, -40°C to 150°C.

Infineon OptiMOS™ IPP60R090CFD7XKSA1, N-channel MOSFET, 600 V Vdss, 25 A Id, 90 mOhm Rds(on) at 11.4 A, 10 V, 51 nC Qg, -55 to 150 °C, PG-TO220-3.

Infineon IRFB5615PBF N-Channel MOSFET, 150V Vdss, 35A Id, 39mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C.

Infineon CoolMOS™ P7 series, IPA70R900P7SXKSA1, N-channel MOSFET, 700 V Vds, 6 A Id, 900 mOhm Rds(on) @ 10 V, TO-220 Full Pack through-hole, -40°C to 150°C junction.

Infineon OptiMOS N-Channel MOSFET, 120 V Vdss, 35 A continuous drain at 25°C, 24 mOhm Rds(on) at 10 V gate drive, 39 nC gate charge, TO-252-3 (DPak) surface-mount package, -55°C to 175°C junction temperature.

Infineon CoolMOS™ CE series, IPA65R400CEXKSA1, N-Channel Super Junction MOSFET, 650 V Vdss, 400 mOhm Rds(on) at 10 V, 15.1 A Id, 39 nC Qg, -55 to 150 °C Tj, PG-TO220-FP through-hole package.

Infineon Technologies CoolMOS™ C3 series, N-Channel MOSFET, IPA90R800C3XKSA2, 900 V drain-source, 6.9 A continuous drain, 800 mOhm Rds(on), TO-220-3 Full Pack (PG-TO220-FP).

Infineon OptiMOS™ series, IPA060N06NXKSA1, N-Channel MOSFET, 60V Vdss, 45A Id, 6mOhm Rds(on) at 10V, TO-220-3 Full Pack, -55°C to 175°C.

Infineon OptiMOS series, N-Channel MOSFET, 150 V drain-source, 43 A continuous drain at 25°C, 7.5 mOhm Rds(on) at 43 A, 10 V, TO-220-3 Full Pack through-hole, -55°C to 175°C operating junction temperature.

Infineon StrongIRFET™, N-Channel MOSFET, IRF135B203, 135 V drain-source, 129 A continuous drain, 8.4 mOhm Rds(on) at 77 A, 10 V gate drive, 270 nC gate charge, TO-220-3, -55 to 175 °C.

Infineon IRF100B201, HEXFET StrongIRFET N-Channel MOSFET, 100 Vdss, 192 A continuous drain, 4.2 mOhm Rds(on) at 115 A, 10 V, 255 nC gate charge, TO-220AB through-hole package, -55 to 175 °C junction temperature.

Infineon IRFSL4010PBF HEXFET N-Channel MOSFET, 100V Vdss, 180A continuous drain, 4.7mOhm Rds(on) at 10V, 215 nC gate charge, TO-262-3 through-hole package.

Infineon CoolMOS™ IPA80R1K4CEXKSA2, N-Channel MOSFET, 800 Vdss, 3.9 A, 1.4 Ohm Rds(on) @ 2.3 A, 10 V, 23 nC Qg, TO-220-3 Full Pack (PG-TO220-FP), -40°C to 150°C.

Infineon HEXFET® IRFS3207TRLPBF, N-Channel MOSFET, 75 V Vdss, 170 A Id, 4.5 mOhm Rds(on) at 75 A, 10 V, D2PAK (TO-263) surface mount, -55°C to 175°C junction.