Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRFB4127PBF, N-Channel MOSFET, 200 V Vdss, 76 A Id, 20 mOhm Rds(on) at 44 A, 10 V, 150 nC Qg, TO-220AB through-hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 76A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 44A, 10V |
| Gate charge (Qg) (Max) @ vgs | 150 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5380 pF @ 50 V |
The IRFB4127PBF: The TO-220AB through-hole package lets you bolt it to a heatsink or chassis — the tab is the drain, so the mounting screw hole doubles as the high-current electrical node.
Total gate charge is 150 nC at 10 V. Input capacitance is 5380 pF at 50 V Vds.
Vgs(th) max is 5V at 250µA.
