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Infineon Technologies IRFB4127PBF
Infineon Technologies

IRFB4127PBF HEXFET N-Ch 200V 76A TO-220AB MOSFET, 20mOhm

MPNIRFB4127PBF
End of Life

Infineon HEXFET® IRFB4127PBF, N-Channel MOSFET, 200 V Vdss, 76 A Id, 20 mOhm Rds(on) at 44 A, 10 V, 150 nC Qg, TO-220AB through-hole, -55°C to 175°C.

$3.66Ref. price · indicative, final on quote
IRFB4127PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB4127PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C76A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 44A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5380 pF @ 50 V

Product details

200 V, 76 A N-channel in a TO-220AB — the switching workhorse

The IRFB4127PBF: The TO-220AB through-hole package lets you bolt it to a heatsink or chassis — the tab is the drain, so the mounting screw hole doubles as the high-current electrical node.

Gate charge and switching — what 150 nC means for the driver

Total gate charge is 150 nC at 10 V. Input capacitance is 5380 pF at 50 V Vds.

Temperature range — 175°C junction buys you margin

Operating temperature range is -55°C to 175°C. Vgs(th) max is 5V at 250µA.

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