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NXP Semiconductors PSMN7R8-120ESQ

PSMN7R8-120ESQ N-Channel MOSFET, 120 V, 7.9 mOhm, TO-262

MPNPSMN7R8-120ESQ
End of Life

Nexperia PSMN7R8-120ESQ, N-channel MOSFET, 120 V Vdss, 7.9 mOhm Rds(on) max at 25 A, 70 A continuous drain, TO-262-3 (I2PAK) through-hole, -55 to 175 °C.

$1.0Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

PSMN7R8-120ESQ Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation349W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs7.9mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs167 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9473 pF @ 60 V

Product details

167 nC gate charge — sizing the driver

Total gate charge is 167 nC at 10 V. For a hard-switched bridge running at 100 kHz, the average gate-drive current works out to roughly 16.7 mA — within the capability of most dedicated MOSFET drivers, but the peak current during the Miller plateau still needs a low-impedance drive path. Input capacitance is 9473 pF at 60 V drain-source, which dominates the switching losses at light load.

Active, ROHS3, wide junction range

It is ROHS3 compliant.

Through-hole I2PAK — board-mounting reality

The TO-262-3 (I2PAK) is a through-hole package with long leads, designed for the same footprint as D2PAK but with the leads bent for vertical PCB mounting. The 349 W power dissipation rating at case temperature assumes a large copper pad on the board side or a heatsink clamped to the exposed metal tab. The 4 V gate threshold at 1 mA drain current means a 5 V logic-level gate drive will not fully enhance the channel — a 10 V rail is needed to reach the rated Rds(on).

Frequently asked questions

What is the Rds(on) of PSMN7R8-120ESQ?

This is the conduction-loss spec for heatsink and efficiency calculations.

What is the PSMN7R8-120ESQ equivalent?

The part is a standard TO-262 N-channel MOSFET — any replacement would need to match the 120 V Vdss, 7.9 mOhm Rds(on), and I2PAK footprint.