Nexperia PSMN7R8-120ESQ, N-channel MOSFET, 120 V Vdss, 7.9 mOhm Rds(on) max at 25 A, 70 A continuous drain, TO-262-3 (I2PAK) through-hole, -55 to 175 °C.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 349W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 7.9mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 167 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9473 pF @ 60 V |
Total gate charge is 167 nC at 10 V. Input capacitance is 9473 pF at 60 V drain-source, which dominates the switching losses at light load.
It is ROHS3 compliant.
The TO-262-3 (I2PAK) is a through-hole package with long leads, designed for the same footprint as D2PAK but with the leads bent for vertical PCB mounting.
This is the conduction-loss spec for heatsink and efficiency calculations.
The part is a standard TO-262 N-channel MOSFET — any replacement would need to match the 120 V Vdss, 7.9 mOhm Rds(on), and I2PAK footprint.