Skip to main content
Infineon Technologies IGB10N60TATMA1

IGB10N60TATMA1 IGBT 600V 20A 110W TO263-3 TrenchStop

MPNIGB10N60TATMA1
End of Life

Infineon TrenchStop IGBT, IGB10N60TATMA1, NPT Trench Field Stop, 600 V Vces, 20 A Ic, 110 W max, 62 nC gate charge, 2.05 V Vce(on) at 15 V/10 A, -40 to 175 °C TJ, PG-TO263-3-2 package.

$1.63Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IGB10N60TATMA1 Technical Specifications
ParameterValue
SeriesTrenchStop®
IGBT typeNPT, Trench Field Stop
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)20 A
Current - collector pulsed30 A
Power - max110 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge62 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 10A, 23Ohm, 15V
Switching energy430µJ
Td (on/off) @ 25°C12ns/215ns
Vce(on) (Max) @ vge, ic2.05V @ 15V, 10A

Product details

It is a standard-input, single-switch device aimed at medium-frequency hard-switching applications like PFC boost stages, motor-drive inverters up to about 1 kW, and induction-heating resonant converters where the 20 A continuous rating gives headroom for 10–15 A RMS load current with a decent heatsink.

62 nC gate charge — sizing the driver

The 62 nC total gate charge is the number that tells you whether your existing gate-driver IC can turn this IGBT on and off fast enough. At a 20 kHz switching frequency, the average gate-drive current needed is 62 nC × 20 kHz = 1.24 mA — trivial. At 100 kHz, that becomes 6.2 mA, still within a standard totem-pole driver's capability. The real limit is the peak current: the driver must supply that 62 nC in the desired turn-on time. A 2 A gate driver charges the gate in about 30 ns; a 0.5 A driver takes about 120 ns. The 12 ns turn-on delay and 215 ns turn-off delay at 25 °C are the internal propagation delays — the actual switching speed is set by the external gate resistor and driver current.

2.05 V Vce(on) and 430 µJ switching loss — the thermal trade-off

The 2.05 V typical saturation voltage at 15 V gate drive and 10 A collector current defines the conduction loss: at 10 A, that's 20.5 W of dissipation in the IGBT alone. The 430 µJ switching energy (tested at 400 V, 10 A, 23 Ω gate resistor, 15 V gate drive) adds a frequency-dependent loss. At 20 kHz, switching loss adds about 8.6 W, bringing total die dissipation to roughly 29 W. The 110 W maximum power rating gives thermal headroom, but the TO-263 package's junction-to-case thermal resistance will be the practical limiter — expect to need a heatsink with forced air or a large copper area on the PCB tab pad.

Active lifecycle and compliance

The TO-263-3 package is a standard Infineon PG-TO263-3-2 footprint, shared with many other 600 V IGBTs in the same family, which simplifies second-sourcing if needed.

Package and thermal design note

The PG-TO263-3-2 (D²Pak) is a surface-mount package with an exposed collector tab. The tab is electrically live at the collector potential, so the PCB copper pad under it must be connected to the collector node and sized for heat spreading. A 4-layer board with thermal vias under the tab dropping to an inner ground plane is the usual approach for dissipating the 20–30 W typical in a hard-switching application. The -40 °C to 175 °C junction temperature range covers automotive under-hood and industrial high-ambient environments without derating.

Frequently asked questions

What is the maximum power dissipation of IGB10N60TATMA1?

The maximum power dissipation is 110 W. This is the absolute limit at the case temperature; practical dissipation will be lower depending on the heatsink and ambient temperature.

Is IGB10N60TATMA1 RoHS compliant?

Yes, it is ROHS3 compliant, meaning it meets the latest EU RoHS directive with no exempted substances above threshold limits.

What is the gate charge of IGB10N60TATMA1?

The total gate charge is 62 nC. This is the charge required to swing the gate from 0 V to 15 V and determines the gate-driver power requirement.