STMicroelectronics · STripFET™ II Series
STMicroelectronics STripFET™ II STP60NF06L, N-Channel MOSFET, 60 V Vdss, 60 A Id, 14 mOhm Rds(on) at 10 V, 66 nC Qg, TO-220-3, -65 to 175 °C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V, 5V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -65°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 25 V |
The STP60NF06L: Total gate charge is 66 nC at 4.5 V — a moderate figure for a 60 A MOSFET. The input capacitance is 2000 pF at 25 V drain-source, which combined with the gate charge sets the switching speed: expect a few hundred kHz in a hard-switched topology before gate-drive losses dominate the thermal budget.
ROHS3 compliant.
