Parametric profile — 800 V, 1.9 A, 2.8 Ohm
The IPD80R2K8CEATMA1: The 800 V Vdss gives headroom for universal-input offline designs (up to 400 VDC bus) plus derating for transients. The 2.8 Ohm Rds(on) at Vgs=10 V is the conduction loss floor; at 150°C junction the on-resistance roughly doubles, so a 1 A RMS current in a 42 W dissipation budget (Tc) needs a heatsink or adequate copper on the TO-252 tab. Gate charge of 12 nC at 10 V means a standard 1 A gate driver can switch this FET at 100 kHz with under 1.2 W gate-drive loss. Input capacitance Ciss is 290 pF at 100 V Vds, keeping the Miller plateau short and the switching transition efficient. The maximum gate-source voltage is ±20 V, so a 12 V gate-drive rail is safe; a 15 V rail needs a series resistor to limit overshoot. The threshold voltage (Vgs(th)) is 3.9 V max at 120 µA, which allows a 5 V logic-level gate drive only if the driver can supply 10 V for the rated Rds(on).
Package and thermal routing
Housed in a PG-TO252-3 (DPak, SC-63) surface-mount package, the exposed tab is the drain. The 42 W maximum power dissipation at Tc=25°C assumes the tab is soldered to a large copper island on the PCB; in still air without a heatsink, the practical dissipation is around 2-3 W before the junction hits 150°C. The part is ROHS3 compliant.