80 V, 60 A N-channel in a full-pack TO-220
The IPA057N08N3GXKSA1 is an 80 V, 60 A N-channel OptiMOS MOSFET in a TO-220 Full Pack package.
Conduction and switching — what the numbers mean
That is the figure to use for worst-case conduction loss at full load; at lower currents or higher gate voltage the Rds(on) will be lower, but the datasheet typical curve is the reference for efficiency calculations. Gate charge totals 69 nC at 10 V — a moderate figure for a 60 A FET, meaning a standard gate driver IC can switch it at tens of kilohertz without excessive drive power. Input capacitance is 4750 pF at 40 V drain-source. Gate threshold voltage is 3.5 V maximum at 90 µA drain current.
Thermal budget and the full-pack advantage
Maximum power dissipation is 39 W at case temperature. The TO-220 Full Pack isolates the tab, which raises the junction-to-case thermal resistance compared to a standard TO-220, but it eliminates the risk of a short to the heatsink. For a 60 A load, the conduction loss alone at 5.7 mOhm is about 20.5 W — that leaves roughly 18.5 W of headroom for switching losses before hitting the 39 W ceiling. A heatsink is required at 60 A; the full-pack tab bolts directly to the sink without an insulator.
It is ROHS3 compliant.