40 V, 100 A N-channel HEXFET in a TO-220AB
Through-hole TO-220AB package suits power-train layouts where the device is bolted to a heatsink or chassis. The 170 W power dissipation rating at case temperature assumes adequate thermal transfer — budget for a heatsink in any continuous-duty application above a few tens of watts.
Gate drive and switching budget
Gate charge totals 93 nC at 10 V, with the input capacitance at 2900 pF measured at 25 V drain. At a 100 kHz switching frequency the gate driver must source 9.3 mA average — within the capability of a standard totem-pole driver, but the peak current during the Miller plateau determines turn-on/turn-off time. The gate threshold voltage is specified at 4 V maximum with 250 µA drain current. The recommended drive voltage for achieving the rated on-resistance is 10 V. Operating with a 5 V gate drive will increase Rds(on) above the 9 mOhm maximum — check the typical transfer curve in the datasheet for your Vgs.
Temperature range and operating limits
Junction temperature range from -55°C to 175°C covers automotive under-hood and industrial enclosures where ambient temperatures push 125°C. The 175°C Tj(max) ceiling provides headroom over the 150°C limit common in this class — useful for designs that run near the thermal derating boundary. Maximum gate-source voltage is ±20 V, which accommodates standard 12 V and 15 V gate drives with margin. No avalanche energy rating is listed in the spec set — confirm the unclamped inductive switching capability from the full datasheet if the design includes flyback or motor-drive kickback.
Sourcing and compliance
The TO-220AB through-hole package is widely second-sourced; several manufacturers offer pin-compatible 40 V N-channel MOSFETs.