IPW60R070CFD7XKSA1

Infineon Technologies · CoolMOS™ CFD7 Series

Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V Vdss, 31 A Id, 70 mOhm Rds(on) at 10 V, 67 nC Qg, TO-247-3 through-hole, -55 to 150 °C.

Infineon Technologies IPW60R070CFD7XKSA1
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Technical specifications

IPW60R070CFD7XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ CFD7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 760µA
Rds on (Max) @ id, vgs70mOhm @ 15.1A, 10V
Gate charge (Qg) (Max) @ vgs67 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2721 pF @ 400 V

Technical details

Gate charge and capacitance — drive budget

The IPW60R070CFD7XKSA1: Total gate charge is 67 nC at 10 V, and input capacitance Ciss is 2721 pF at 400 V drain.

Through-hole TO-247 — rework and thermal handling

Housed in a TO-247-3 through-hole package (PG-TO247-3-21), this part is a bench-friendly choice. The large tab provides a low thermal resistance path to a heatsink — the power dissipation ceiling is 156 W at case temperature. For a rework tech, the three through-hole leads are easy to desolder with a hot-air station or solder sucker; the tab can be screwed down for mechanical retention and thermal transfer.

Temperature range and application envelope

The 650 V Vdss leaves margin above a 400 V DC bus, a typical voltage in three-phase industrial drives and server PFC stages.

IPW60R070CFD7XKSA1
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