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Infineon Technologies IRF1405ZPBF

IRF1405ZPBF MOSFET N-CH 55V 75A TO-220AB, 4.9 mOhm Rds(on)

MPNIRF1405ZPBF
End of Life

IRF1405ZPBF, HEXFET series, N-channel MOSFET, 55V Vdss, 75A Id, 4.9 mOhm Rds(on) at 10V, 180 nC Qg, TO-220AB through-hole, -55 to 175°C.

$3.05Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF1405ZPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.9mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4780 pF @ 25 V

Product details

Gate charge and switching budget

The IRF1405ZPBF: Total gate charge is 180 nC at 10 V, with an input capacitance of 4780 pF at 25 V drain bias. The gate threshold voltage is 4 V maximum at 250 µA drain current, so a 10 V drive rail is recommended to achieve the specified Rds(on); the device is rated for a maximum gate-source voltage of ±20 V.

Thermal and mechanical fit

The TO-220AB package (3-lead through-hole) mates with standard TO-220 heatsinks and PCB layouts — the tab is the drain, so the thermal pad is electrically live and must be isolated or shared with the drain node.

Frequently asked questions

What is the Rds(on) of IRF1405ZPBF at 10V?

This is the conduction loss spec to use for heatsink and PCB copper sizing.