IRF1405ZPBF, HEXFET series, N-channel MOSFET, 55V Vdss, 75A Id, 4.9 mOhm Rds(on) at 10V, 180 nC Qg, TO-220AB through-hole, -55 to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 75A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 4.9mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 180 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4780 pF @ 25 V |
The IRF1405ZPBF: Total gate charge is 180 nC at 10 V, with an input capacitance of 4780 pF at 25 V drain bias.
The TO-220AB package (3-lead through-hole) mates with standard TO-220 heatsinks and PCB layouts — the tab is the drain, so the thermal pad is electrically live and must be isolated or shared with the drain node.
This is the conduction loss spec to use for heatsink and PCB copper sizing.