60 V, 5.3 mOhm N-channel MOSFET in TO-252
The Infineon IPD053N06NATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS series, rated for 60 V drain-source voltage and 45 A continuous drain current at the case temperature. Its 5.3 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses low in switching and linear applications. The part comes in a TO-252-3 (DPak) surface-mount package, suited for automated assembly in automotive and industrial power stages.
Temperature range and package — deployment context
The junction temperature range spans -55°C to 175°C, covering automotive under-hood, industrial motor drives, and outdoor telecom power supplies. The TO-252 (DPak) footprint is common on automotive ECU and industrial converter boards; its tab is the drain, so PCB thermal vias under the tab are standard practice. The surface-mount package suits reflow assembly, and the part is available in Tape & Reel for volume pick-and-place.
