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Infineon Technologies IPP100N12S305AKSA1

Infineon IPP100N12S305AKSA1 N-Channel MOSFET, 120 V, 100 A

MPNIPP100N12S305AKSA1
End of Life

Infineon OptiMOS™ IPP100N12S305AKSA1, N-Channel MOSFET, 120 V drain-source, 100 A continuous, 5.1 mOhm Rds(on) at 10 V, TO-220-3, AEC-Q101 qualified, -55°C to 175°C junction temperature.

$5.3Ref. price · indicative, final on quote
Infineon Technologies IPP100N12S305AKSA1 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP100N12S305AKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs5.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs185 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11570 pF @ 25 V

Product details

Through-hole N-channel for high-current automotive loads

The TO-220-3 through-hole package handles the 300 W power dissipation with an adequate heatsink, making this part a candidate for high-current switching in automotive power distribution, DC-DC converters, and motor-drive pre-drive stages.

At 100 A, conduction loss is 51 W (I² × R) at the worst-case Rds(on); the actual die temperature rise will increase Rds(on) above the 25°C value per the normalised curve in the datasheet, so the thermal budget must be calculated at the operating junction temperature.

Frequently asked questions

Is IPP100N12S305AKSA1 automotive qualified?

Yes, it is AEC-Q101 qualified and listed with an Automotive grade.