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Infineon Technologies IPZ60R017C7XKSA1
Infineon Technologies

IPZ60R017C7XKSA1 CoolMOS C7 N-Ch 600V 109A TO-247-4

MPNIPZ60R017C7XKSA1
End of Life

Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-source, 109 A continuous drain current, 17 mOhm max on-resistance at 10 V gate drive, PG-TO247-4 through-hole package, -55 to 150 °C junction temperature.

$23.42Ref. price · indicative, final on quote
IPZ60R017C7XKSA1 datasheet
PackagingTO-247-4
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPZ60R017C7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C109A (Tc)
Power dissipation446W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-4
Vgs(th) (Max) @ id4V @ 2.91mA
Rds on (Max) @ id, vgs17mOhm @ 58.2A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9890 pF @ 400 V

Product details

600 V, 17 mOhm — the high-efficiency power stage workhorse

The IPZ60R017C7XKSA1: The PG-TO247-4 package adds a Kelvin source pin that separates the gate-drive return from the power path, reducing common-source inductance.

Gate charge and input capacitance — driver budget

Total gate charge is 240 nC at 10 V. Input capacitance Ciss is 9890 pF at 400 V drain-source. Gate threshold voltage is 4 V maximum at 2.91 mA drain current. Recommended drive voltage is 10 V for rated Rds(on).

Infineon lists the IPZ60R017C7XKSA1 as Active product status. The CoolMOS C7 series is Infineon's high-voltage MOSFET platform. For dual-sourcing, a buyer would need to qualify a functionally equivalent part from another manufacturer.

Thermal management — 446 W dissipation ceiling

Maximum power dissipation is 446 W at the case temperature Tc. This is a theoretical limit under ideal heatsinking — real-world dissipation will be lower based on the thermal resistance of the heatsink and ambient conditions.

Frequently asked questions

Does IPZ60R017C7XKSA1 require a heatsink?

At 446 W maximum power dissipation, this device absolutely requires a heatsink in any application above a few watts. The junction-to-case thermal path is designed for a large metal heatsink; the TO-247-4 package is intended for bolt-down mounting to a heatsink with thermal interface material. Without a heatsink, the junction temperature will exceed the 150 °C maximum rating at even moderate current levels.

What is the difference between CoolMOS C7 and C6?

CoolMOS C7 is Infineon's successor to the C6 generation, offering lower Rds(on) for a given die size and improved switching performance through reduced gate charge and output capacitance. The C7 series targets high-efficiency power supplies where every milliohm of conduction loss matters. The IPZ60R017C7XKSA1's 17 mOhm Rds(on) at 600 V is a density improvement that was not available in the C6 generation at this voltage class.

Does IPZ60R017C7XKSA1 meet RoHS requirements?

Yes, the IPZ60R017C7XKSA1 is ROHS3 compliant, meeting the latest EU restriction of hazardous substances directive including lead, mercury, cadmium, and other restricted materials.