Infineon OptiMOS™ series, IPA060N06NXKSA1, N-Channel MOSFET, 60V Vdss, 45A Id, 6mOhm Rds(on) at 10V, TO-220-3 Full Pack, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 45A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.3V @ 36µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 45A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 30 V |
The IPA060N06NXKSA1 is an Infineon OptiMOS™ N-channel MOSFET rated for 60 V drain-source and 45 A continuous drain at 25°C case temperature.
The TO-220 Full Pack (PG-TO220-FP) has an isolated tab. That matters when you are swapping a FET on a customer site with a screwdriver and a tube of paste, not a lab bench.
6 mOhm maximum at 45 A drain current with 10 V gate drive. That is the conduction-loss floor — at 45 A the dissipation is about 12 W, which the 33 W package rating handles with a reasonable heatsink.
Yes, it is ROHS3 compliant — no restricted substances above the threshold limits.