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Infineon Technologies IRF1018EPBF
Infineon Technologies

IRF1018EPBF HEXFET N-Channel MOSFET, 60V 79A TO-220AB

MPNIRF1018EPBF
End of Life

IRF (International Rectifier) HEXFET N-Channel MOSFET, 60 V Vdss, 79 A continuous drain (Tc), 8.4 mOhm max Rds(on) at 10 V, 69 nC gate charge, TO-220AB, -55°C to 175°C junction temperature.

$1.39Ref. price · indicative, final on quote
IRF1018EPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF1018EPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C79A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs8.4mOhm @ 47A, 10V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2290 pF @ 50 V

Product details

8.4 mOhm Rds(on) at 10 V — the conduction loss number

The IRF1018EPBF: The 8.4 mOhm max on-resistance at Vgs=10 V, 47 A sets the conduction loss floor for the design.

175°C junction — military-temp headroom

The -55°C to 175°C operating junction temperature range covers avionics power supplies, actuator drives, downhole instrumentation, and engine-bay DC-DC converters.

The through-hole TO-220AB package is a standard stock item across multiple distributor channels, so lead time is typically a few weeks for production volumes.

Frequently asked questions

What is the Rds(on) of IRF1018EPBF?

This is the conduction-loss spec that drives heatsink sizing and efficiency calculations in the power stage.