IRF (International Rectifier) HEXFET N-Channel MOSFET, 60 V Vdss, 79 A continuous drain (Tc), 8.4 mOhm max Rds(on) at 10 V, 69 nC gate charge, TO-220AB, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 79A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 47A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2290 pF @ 50 V |
The IRF1018EPBF: The 8.4 mOhm max on-resistance at Vgs=10 V, 47 A sets the conduction loss floor for the design.
The -55°C to 175°C operating junction temperature range covers avionics power supplies, actuator drives, downhole instrumentation, and engine-bay DC-DC converters.
The through-hole TO-220AB package is a standard stock item across multiple distributor channels, so lead time is typically a few weeks for production volumes.
This is the conduction-loss spec that drives heatsink sizing and efficiency calculations in the power stage.