Infineon Technologies
Infineon IRFB5615PBF N-Channel MOSFET, 150V Vdss, 35A Id, 39mOhm Rds(on) at 10V, TO-220-3 through-hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 144W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 39mOhm @ 21A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1750 pF @ 50 V |
Maximum Rds(on) is 39 mOhm at Vgs = 10 V and Id = 21 A. Gate charge totals 40 nC at 10 V.
It is ROHS3 compliant.
