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Infineon Technologies IPA90R800C3XKSA2 — Discrete Semiconductors

Infineon IPA90R800C3XKSA2 CoolMOS N-Ch MOSFET, 900V 6.9A

MPNIPA90R800C3XKSA2
Active

Infineon Technologies CoolMOS™ C3 series, N-Channel MOSFET, IPA90R800C3XKSA2, 900 V drain-source, 6.9 A continuous drain, 800 mOhm Rds(on), TO-220-3 Full Pack (PG-TO220-FP).

$2.5700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA90R800C3XKSA2 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.9A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 460µA
Rds on (Max) @ id, vgs800mOhm @ 4.1A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 100 V

Product details

Package, mounting, and thermal budget

Housed in the TO-220 Full Pack (PG-TO220-FP), the IPA90R800C3XKSA2 is a through-hole device with a fully isolated tab — no insulating pad or washer needed between the backside and the heatsink. The full-pack moulding adds roughly 1–2 °C/W to the junction-to-case thermal resistance compared to a standard TO-220, but it eliminates the risk of a heatsink short to the drain in a metal-enclosure design. Maximum power dissipation is 33 W at case temperature, and the junction temperature range spans -55 °C to 150 °C — a standard industrial temperature grade that covers outdoor telecom rectifiers and motor-drive auxiliary supplies without margin concerns.

Frequently asked questions

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