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Infineon Technologies IPA60R190P6XKSA1 — Discrete Semiconductors

Infineon IPA60R190P6XKSA1 CoolMOS P6 N-Ch 600V 20.2A

MPNIPA60R190P6XKSA1
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Infineon Technologies CoolMOS™ P6 series, N-Channel MOSFET, 600 V drain-source, 20.2 A continuous drain, 190 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole, tube.

$2.9100Ref. price · indicative, final on quote
Infineon Technologies IPA60R190P6XKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R190P6XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 630µ
Rds on (Max) @ id, vgs190mOhm @ 7.6A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1750 pF @ 100 V

Product details

600 V CoolMOS P6 in a TO-220 Full Pack

The IPA60R190P6XKSA1: Housed in a TO-220 Full Pack (PG-TO220-FP), the through-hole package has an isolated tab — no separate heatsink pad or insulating washer is needed when mounting to a grounded chassis or heatsink. The full-pack construction also reduces the thermal path to the heatsink compared to a standard TO-220 with an external insulator.

These numbers set the driver current needed for a target switching frequency — a 37 nC gate at 100 kHz draws 3.7 mA from the gate driver, well within the capability of most half-bridge driver ICs. Maximum power dissipation is 34 W at case temperature — derate linearly above 25 °C per the datasheet curve.

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Frequently asked questions

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