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Infineon Technologies IDW15E65D2

Infineon IDW15E65D2 CoolSiC+ Diode, 650V 30A TO-247-3

MPNIDW15E65D2
End of Life

Infineon CoolSiC™+ series, IDW15E65D2, standard diode, 650 V reverse, 30 A average rectified, 47 ns reverse recovery, TO-247-3 through-hole package, -40°C to 175°C junction temperature.

$1.2Ref. price · indicative, final on quote
Infineon Technologies IDW15E65D2 datasheet (PDF)
PackagingTO-247-3
SeriesCoolSiC™+
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IDW15E65D2 specifications
ParameterValue
SeriesCoolSiC™+
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if2.3 V @ 15 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified30A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseTO-247-3
Reverse recovery time47 ns

Product details

Silicon carbide standard diode for hard-switched PFC and inverter stages

It is built for continuous conduction mode (CCM) power factor correction, solar inverter boost stages, and motor drive DC-link snubbers where low reverse recovery charge trims switching losses.

47 ns reverse recovery — the switching loss lever

Reverse recovery time is 47 ns, which places this part in the fast-recovery class (≤ 500 ns at > 200 mA). Forward voltage is specified at 2.3 V typical when conducting 15 A. Reverse leakage at full blocking voltage is 40 µA at 650 V.

Frequently asked questions

What is the maximum operating temperature of IDW15E65D2?

This allows use in high-ambient industrial environments with adequate heatsinking.

What is the reverse recovery time of IDW15E65D2?

Reverse recovery time is 47 ns, classifying it as a fast-recovery diode (≤ 500 ns at > 200 mA).

Is IDW15E65D2 a Schottky diode?

No, it is a standard (PN) recovery diode from the CoolSiC™+ series. The 47 ns trr is typical of fast-recovery silicon carbide diodes, not Schottky.