IDW15E65D2

Infineon Technologies · CoolSiC™+ Series

Infineon CoolSiC™+ series, IDW15E65D2, standard diode, 650 V reverse, 30 A average rectified, 47 ns reverse recovery, TO-247-3 through-hole package, -40°C to 175°C junction temperature.

Infineon Technologies IDW15E65D2
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Technical specifications

IDW15E65D2 specifications
Parameter / AttributeSpecification / Value
SeriesCoolSiC™+
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if2.3 V @ 15 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified30A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseTO-247-3
Reverse recovery time47 ns

Technical details

Silicon carbide standard diode for hard-switched PFC and inverter stages

It is built for continuous conduction mode (CCM) power factor correction, solar inverter boost stages, and motor drive DC-link snubbers where low reverse recovery charge trims switching losses.

47 ns reverse recovery — the switching loss lever

Reverse recovery time is 47 ns, which places this part in the fast-recovery class (≤ 500 ns at > 200 mA). Forward voltage is specified at 2.3 V typical when conducting 15 A. Reverse leakage at full blocking voltage is 40 µA at 650 V.

IDW15E65D2
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