650 V N-channel with MDmesh™ — what this part is
MDmesh™ technology reduces on-resistance per unit area compared to a conventional planar MOSFET at this voltage class.
Maximum on-resistance is 1 Ohm at 2.5 A drain current with 10 V gate drive. Total gate charge is 18 nC at 10 V.
For new designs or a production BOM that needs a pin-compatible through-hole 650 V N-channel MOSFET, a parametric search across the TO-220-3 footprint and 8 A / 1 Ohm window will identify current-production alternatives from ST or other vendors.
