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Infineon Technologies IPI041N12N3GAKSA1

Infineon IPI041N12N3GAKSA1 N-Channel MOSFET, 120 V, 120 A

MPNIPI041N12N3GAKSA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 120 V drain-source, 120 A continuous drain, 4.1 mOhm max on-resistance at 100 A, 10 V gate drive, PG-TO262-3 through-hole package, -55 to 175 °C junction temperature.

$6.11Ref. price · indicative, final on quote
Infineon Technologies IPI041N12N3GAKSA1 datasheet (PDF)
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPI041N12N3GAKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs4.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs211 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13800 pF @ 60 V

Product details

Package and mounting — through-hole for high-current terminations

The IPI041N12N3GAKSA1: The PG-TO262-3 (I²Pak) through-hole package with long leads is designed for bolted or soldered connections to a heatsink or bus bar. The 300 W power dissipation at case temperature (Tc) means the thermal path — case-to-heatsink interface, thermal compound, airflow — determines the real current the part can carry in your enclosure.

ROHS3 compliant. No last-time-buy or end-of-life notice is on record for this order code.

Frequently asked questions

Is IPI041N12N3GAKSA1 RoHS compliant?

Yes, the IPI041N12N3GAKSA1 is ROHS3 compliant.