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Infineon Technologies IPI041N12N3GAKSA1
Infineon Technologies

Infineon IPI041N12N3GAKSA1 N-Channel MOSFET, 120 V, 120 A

MPNIPI041N12N3GAKSA1
End of Life

Infineon OptiMOS™ N-Channel MOSFET, 120 V drain-source, 120 A continuous drain, 4.1 mOhm max on-resistance at 100 A, 10 V gate drive, PG-TO262-3 through-hole package, -55 to 175 °C junction temperature.

$6.11Ref. price · indicative, final on quote
IPI041N12N3GAKSA1 datasheet
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPI041N12N3GAKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs4.1mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs211 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13800 pF @ 60 V

Product details

Package and mounting — through-hole for high-current terminations

The IPI041N12N3GAKSA1: The PG-TO262-3 (I²Pak) through-hole package with long leads is designed for bolted or soldered connections to a heatsink or bus bar. The 300 W power dissipation at case temperature (Tc) means the thermal path — case-to-heatsink interface, thermal compound, airflow — determines the real current the part can carry in your enclosure.

Lifecycle and compliance — active production, no LTB risk

ROHS3 compliant. No last-time-buy or end-of-life notice is on record for this order code. For a BOM line that needs a 120 V, 120 A N-channel through-hole MOSFET, this part can be committed to production without obsolescence contingency planning.

Frequently asked questions

Is IPI041N12N3GAKSA1 RoHS compliant?

Yes, the IPI041N12N3GAKSA1 is ROHS3 compliant.