Why a 20 mOhm P-channel in a TDSON-8 package
The BSC200P03LSG is an Infineon OptiMOS P-channel MOSFET that lives in the space between a small-signal load switch and a high-current OR-ing diode replacement. With a 30 V drain-to-source rating and 12.5 A continuous drain current at the case, it handles 12 V and 24 V rails with margin.
Gate charge and switching — 48.5 nC at 10 V
Total gate charge is 48.5 nC at 10 V. That is a moderate figure — your gate driver needs to source about 4.8 mA per 100 kHz of switching frequency to charge that capacitance. The 2430 pF input capacitance at 15 V drain tells you the Miller plateau is not trivial; expect to budget a gate resistor to tame ringing if you are switching above a few hundred kHz.
Package reality: 8-PowerTDFN (PG-TDSON-8-6)
The part comes in an 8-PowerTDFN, also called PG-TDSON-8-6. That is a thermally enhanced package with an exposed drain pad underneath. The 2.5 W dissipation at ambient and 63 W at the case tell the story: the thermal path goes through the pad to the PCB copper, not through the plastic. Surface-mount only — no through-hole option.
Temperature range and operating limits
Junction temperature range is -55°C to 150°C, which covers military and industrial environments. The 1 V max gate threshold at 100 µA drain current means this part turns on hard with logic-level gate drives, but the 10 V drive voltage for minimum Rds(on) is the real operating point. The ±25 V max gate rating gives headroom for gate-drive transients.