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Infineon Technologies IPW65R019C7FKSA1

Infineon IPW65R019C7FKSA1 CoolMOS C7 N-Ch 650V 75A TO-247

MPNIPW65R019C7FKSA1
End of Life

Infineon CoolMOS™ C7 series, IPW65R019C7FKSA1, N-Channel MOSFET, 650 V Vdss, 75 A Id, 19 mOhm Rds(on) at 58.3 A, 10 V, 215 nC Qg, TO-247-3 (PG-TO247-3), Through Hole, -55°C to 150°C junction.

$22.68Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPW65R019C7FKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation446W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 2.92mA
Rds on (Max) @ id, vgs19mOhm @ 58.3A, 10V
Gate charge (Qg) (Max) @ vgs215 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9900 pF @ 400 V

Product details

19 mOhm Rds(on) — the conduction-loss floor in a 650 V part

The IPW65R019C7FKSA1: That Rds(on) figure is the key spec for a designer sizing the conduction losses in a high-current PFC or LLC resonant converter — at 75 A continuous drain current the I²R loss at 19 mOhm is about 107 W, which sets the heatsinking requirement. The 650 V drain-to-source rating gives enough headroom for 400 V bus applications with switching transients.

Gate charge and switching — 215 nC at 10 V

Total gate charge is 215 nC at 10 V, which is moderate for a 75 A device. At a 100 kHz switching frequency the average gate-drive current needed is about 21.5 mA — well within the capability of a standard gate-driver IC. The input capacitance is 9900 pF at 400 V drain bias, so the driver must source enough peak current to charge that capacitance during the Miller plateau without excessive slew-rate limiting.

Through-hole TO-247 — thermal and assembly fit

The part comes in a TO-247-3 (PG-TO247-3) through-hole package. The large tab area couples directly to a heatsink, which is necessary given the 446 W maximum power dissipation at the case. The through-hole mounting suits designs where vibration resistance and manual rework are priorities over automated SMT placement. The listed shipping form is Tube, so plan for tube-to-reel transfer if the pick-and-place line expects tape.

The wide range also gives margin for fault conditions like short-circuit or overcurrent events that cause transient junction heating.

Frequently asked questions

What is the Rds(on) of IPW65R019C7FKSA1?

That is the conduction-loss spec that drives heatsink sizing in a high-current power stage.