IRF100B201

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon IRF100B201, HEXFET StrongIRFET N-Channel MOSFET, 100 Vdss, 192 A continuous drain, 4.2 mOhm Rds(on) at 115 A, 10 V, 255 nC gate charge, TO-220AB through-hole package, -55 to 175 °C junction temperature.

Infineon Technologies IRF100B201
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Technical specifications

IRF100B201 specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C192A (Tc)
Power dissipation441W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 115A, 10V
Gate charge (Qg) (Max) @ vgs255 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9500 pF @ 50 V

Technical details

Active production, 100 V N-channel in TO-220AB

The TO-220AB through-hole package suits bolted-down heatsink mounting in power supplies, DC-DC converters, and inverter legs where board-level thermal management is the primary constraint.

Total gate charge is 255 nC at 10 V, with an input capacitance of 9500 pF at 50 V drain bias. For a 100 kHz hard-switched application, the average gate-drive current required is 25.5 mA — within the capability of a standard totem-pole driver, but the peak current during the Miller plateau demands a driver with at least 2 A source/sink capability to keep switching losses under control.

Thermal and environmental rating

IRF100B201
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