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Infineon Technologies IRF100B201
Infineon Technologies

IRF100B201 N-Channel MOSFET, 100 V, 192 A, TO-220AB

MPNIRF100B201
End of Life

Infineon IRF100B201, HEXFET StrongIRFET N-Channel MOSFET, 100 Vdss, 192 A continuous drain, 4.2 mOhm Rds(on) at 115 A, 10 V, 255 nC gate charge, TO-220AB through-hole package, -55 to 175 °C junction temperature.

$2.86Ref. price · indicative, final on quote
IRF100B201 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF100B201 Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C192A (Tc)
Power dissipation441W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 115A, 10V
Gate charge (Qg) (Max) @ vgs255 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9500 pF @ 50 V

Product details

Active production, 100 V N-channel in TO-220AB

The TO-220AB through-hole package suits bolted-down heatsink mounting in power supplies, DC-DC converters, and inverter legs where board-level thermal management is the primary constraint.

Gate charge and switching budget

Total gate charge is 255 nC at 10 V, with an input capacitance of 9500 pF at 50 V drain bias. For a 100 kHz hard-switched application, the average gate-drive current required is 25.5 mA — within the capability of a standard totem-pole driver, but the peak current during the Miller plateau demands a driver with at least 2 A source/sink capability to keep switching losses under control. The ±20 V maximum gate-source rating provides margin for ringing on long gate traces in high-current layouts.

Thermal and environmental rating

Maximum power dissipation is 441 W at case temperature 25 °C, derated linearly above that point.

Frequently asked questions

What is the Rds(on) of IRF100B201?

The maximum on-resistance is 4.2 mOhm at 115 A drain current with 10 V gate-to-source drive. This is the conduction-loss figure used for heatsink sizing in high-current paths.

What is the gate charge of IRF100B201?

This value determines the average gate-drive current needed at the target switching frequency and the peak current capability required from the gate driver.

Can IPD50R950CEAUMA1 replace IRF100B201?

No. The IPD50R950CEAUMA1 is a 500 V CoolMOS CE part with 950 mOhm Rds(on) and 4.3 A continuous drain current — a different voltage class and current rating. It is not a functional replacement for the 100 V, 192 A IRF100B201.