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Infineon Technologies IRFSL4010PBF

IRFSL4010PBF HEXFET N-Channel MOSFET, 100V 180A TO-262

MPNIRFSL4010PBF
End of Life

Infineon IRFSL4010PBF HEXFET N-Channel MOSFET, 100V Vdss, 180A continuous drain, 4.7mOhm Rds(on) at 10V, 215 nC gate charge, TO-262-3 through-hole package.

$3.66Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFSL4010PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.7mOhm @ 106A, 10V
Gate charge (Qg) (Max) @ vgs215 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9575 pF @ 50 V

Product details

180A at 100V — sizing the power stage

The IRFSL4010PBF: That current rating assumes the case is held at 25°C — in a real enclosure with 60°C ambient and a heatsink, the usable current derates significantly, so the thermal design must be sized for the 375W maximum dissipation at the case. The 4.7mOhm on-resistance at 10V gate drive produces 153W I²R loss at 180A.

Gate drive and switching budget

The 9575 pF input capacitance at 50V Vds sets the Miller plateau charge. Combined with the 215 nC Qg, this part is designed for hard-switched topologies at moderate frequencies — think 20-50 kHz in a DC-DC converter or motor inverter. The ±20V maximum gate rating gives margin for gate-drive overshoot in noisy environments. The 4V threshold at 250µA drain current means the device is fully enhanced by 10V drive but will start conducting well below 5V — important for shoot-through prevention in half-bridge designs where the gate driver must hold the off-state below 4V during the dead time.

Package and thermal interface

The TO-262-3 (I²Pak) package is a through-hole variant with long leads — the same die as the TO-220 but with a longer lead length for heatsink mounting in applications where the PCB is on one side of the chassis and the heatsink on the other. The 175°C Tj max gives headroom for transient overloads but continuous operation above 150°C junction accelerates oxide wear-out.

Lifecycle and sourcing posture

The part is ROHS3 compliant (lead-free).

Frequently asked questions

Is IRFSL4010PBF lead-free?

Yes, the IRFSL4010PBF is ROHS3 compliant.