STP9NK50Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH N-channel MOSFET, STP9NK50Z, 500 V drain-source, 7.2 A continuous drain, 850 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STP9NK50Z
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Technical specifications

STP9NK50Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.2A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs850mOhm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds910 pF @ 25 V

Technical details

500 V, 7.2 A — what this N-channel MOSFET handles

The STP9NK50Z: The TO-220-3 through-hole package lets you bolt a heatsink directly to the tab, which is how you keep junction temperature under the 150 °C absolute maximum when sinking the full 110 W dissipation.

Gate charge and switching — 32 nC at 10 V

The 4.5 V maximum gate threshold at 100 µA drain current means the device is fully off below 4.5 V on the gate.

Package and thermal — TO-220 with 110 W dissipation ceiling

The TO-220-3 package has a metal tab that is electrically common with the drain. In practice, derate from 110 W based on your heatsink's thermal resistance and the ambient temperature.

STP9NK50Z
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