Infineon StrongIRFET™, N-Channel MOSFET, IRF135B203, 135 V drain-source, 129 A continuous drain, 8.4 mOhm Rds(on) at 77 A, 10 V gate drive, 270 nC gate charge, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 135 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 129A (Tc) |
| Power dissipation | 441W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 77A, 10V |
| Gate charge (Qg) (Max) @ vgs | 270 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9700 pF @ 50 V |
The TO-220-3 through-hole package allows a large clip-on or bolt-down heatsink, which is the practical path to extracting the full current rating.
A gate resistor in the 5–15 Ohm range controls ringing without slowing the edge too much.
The ROHS3 compliance means it meets the latest RoHS exemption-free requirements.
The continuous drain current is 129 A at 25 °C case temperature. This rating assumes the case is held at 25 °C; real-world current is derated based on the thermal resistance of the heatsink and ambient temperature.