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Infineon Technologies IPAN70R750P7SXKSA1 — Discrete Semiconductors

IPAN70R750P7SXKSA1 CoolMOS P7 N-Ch 700V 6.5A TO-220FP

MPNIPAN70R750P7SXKSA1
Active

Infineon CoolMOS™ P7 N-Channel MOSFET, IPAN70R750P7SXKSA1, 700 V Vdss, 6.5 A Id, 750 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -40°C to 150°C junction temperature.

$0.9500Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPAN70R750P7SXKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.5A (Tc)
Power dissipation20.8W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 70µA
Rds on (Max) @ id, vgs750mOhm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs8.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds306 pF @ 400 V

Product details

The IPAN70R750P7SXKSA1: This is a through-hole device in the TO-220 Full Pack package — the full-pack moulding provides electrical isolation between the tab and the heatsink, so no insulating pad or washer is needed when bolting it to a grounded chassis.

Switching losses and gate drive budget

Total gate charge is 8.3 nC at 10 V, and input capacitance measures 306 pF at 400 V drain-source.

Temperature range and field environment

The gate threshold is 3.5 V maximum at 70 µA, so a 10 V drive voltage turns it on fully.

It is ROHS3 compliant. The base product number is IPAN70, and the series is CoolMOS P7. No official second-source or successor is listed in the Infineon cross-reference for this exact order code.

Frequently asked questions

Is IPAN70R750P7SXKSA1 RoHS compliant?

Yes, the part is ROHS3 compliant per Infineon's listing.