STMicroelectronics STripFET™ II N-Channel MOSFET, 250 V, 17 A, 165 mOhm, TO-220-3, Through Hole, Tube.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 90W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 25 V |
The STP17NF25: The TO-220-3 through-hole package allows direct mounting to a heatsink for thermal management in power circuits.
Maximum power dissipation is 90 W at case temperature, with the junction rated for -55 to 150 °C operating range.
Fully ROHS3 compliant, meeting current environmental substance restrictions for electronic equipment.