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Infineon Technologies IPA126N10N3G — Discrete Semiconductors

Infineon IPA126N10N3G N-Channel MOSFET, 100 V, 35 A

MPNIPA126N10N3G
Active

Infineon OptiMOS™3 IPA126N10N3G, N-Channel MOSFET, 100 V Vdss, 35 A Id, 12.6 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 175 °C.

$0.7500Ref. price · indicative, final on quote
Infineon Technologies IPA126N10N3G datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA126N10N3G specifications
ParameterValue
SeriesOptiMOS™3
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 45µA
Rds on (Max) @ id, vgs12.6mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 50 V

Product details

Gate drive and switching — 35 nC total gate charge

The input capacitance is 2500 pF at 50 V drain, which is moderate for a 100 V device and keeps the driver current requirement manageable. The threshold voltage range is 3.5 V max at 45 µA drain current, and the recommended drive voltage is 6 V to 10 V for the lowest Rds(on).

Package and thermal — TO-220 Full Pack, 33 W dissipation

The 33 W power dissipation limit at case temperature means a heatsink is required for any continuous current above about 10 A, depending on ambient and airflow.

Frequently asked questions

Does IPA126N10N3G require a heat sink?

Yes, for continuous operation above about 10 A drain current a heatsink is needed — the package is limited to 33 W dissipation at the case, and at 35 A the conduction loss alone is about 15.4 W.