600 V, 6 A N-channel — the PFC and flyback workhorse tier
The IPA60R600P7SXKSA1: The CoolMOS P7 series targets the balance of low on-resistance and low gate charge for hard-switching topologies.
Gate drive and switching loss — the 9 nC Qg advantage
Input capacitance Ciss is 363 pF at 400 V drain bias, which keeps the Miller plateau short and the switching losses manageable in a hard-switched topology. The ±20 V maximum gate rating gives margin for ringing on the gate node in a noisy layout.
Package and mounting — TO-220 FullPAK simplifies thermal design
The PG-TO220-FP (FullPAK) is a fully isolated through-hole package. The metal tab is electrically isolated from the die, so the MOSFET can be bolted directly to a heatsink without a thermal pad or mica washer. This saves assembly time and reduces the thermal interface resistance to a single layer of thermal compound. The 21 W maximum dissipation at case temperature is derated above 25°C per the datasheet curve — a heatsink sized for the actual load power is required above a few watts of continuous dissipation.
ROHS3 compliant (lead-free). The base product number is IPA60R600, which covers the die and package variant; the full order code IPA60R600P7SXKSA1 is the specific Infineon ordering code for the TO-220 FullPAK variant in the CoolMOS P7 series.