IPA80R1K4CEXKSA2

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ IPA80R1K4CEXKSA2, N-Channel MOSFET, 800 Vdss, 3.9 A, 1.4 Ohm Rds(on) @ 2.3 A, 10 V, 23 nC Qg, TO-220-3 Full Pack (PG-TO220-FP), -40°C to 150°C.

Infineon Technologies IPA80R1K4CEXKSA2
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Technical specifications

IPA80R1K4CEXKSA2 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.9A (Tc)
Power dissipation31W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 240µA
Rds on (Max) @ id, vgs1.4Ohm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 100 V

Technical details

800 V CoolMOS in a full-pack TO-220

The IPA80R1K4CEXKSA2: It is built on Infineon's CoolMOS technology platform, which optimises the trade-off between on-resistance and gate charge for hard-switching topologies.

On-resistance and gate charge — the switching loss trade-off

This is the figure to use for worst-case conduction loss calculations at the target operating current. Input capacitance is 570 pF at 100 V drain-source. The 800 V rating and 3.9 A current capability suit this device for offline flyback converters, auxiliary power supplies, and PFC stages.

Full-pack isolation and thermal path

The PG-TO220-FP package has the die mounted on an isolated leadframe, so the metal tab is electrically floating. Maximum power dissipation is 31 W at case temperature, derated to zero at 150°C junction. Through-hole mounting with a single M3 screw to a heatsink is the standard assembly method. The full-pack construction means the heatsink does not need to be grounded, which can simplify layout in non-isolated topologies.

IPA80R1K4CEXKSA2
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