800 V CoolMOS in a full-pack TO-220
The IPA80R1K4CEXKSA2: It is built on Infineon's CoolMOS technology platform, which optimises the trade-off between on-resistance and gate charge for hard-switching topologies. The part comes in a TO-220-3 Full Pack package (PG-TO220-FP), which provides full isolation between the mounting tab and the die.
On-resistance and gate charge — the switching loss trade-off
This is the figure to use for worst-case conduction loss calculations at the target operating current. Total gate charge at 10 V is 23 nC, which keeps the drive current requirement modest — a typical gate-driver IC can switch this MOSFET at frequencies up to 100 kHz without excessive dissipation in the driver. Input capacitance is 570 pF at 100 V drain-source. The 800 V rating and 3.9 A current capability suit this device for offline flyback converters, auxiliary power supplies, and PFC stages.
Full-pack isolation and thermal path
The PG-TO220-FP package has the die mounted on an isolated leadframe, so the metal tab is electrically floating. Maximum power dissipation is 31 W at case temperature, derated to zero at 150°C junction. Through-hole mounting with a single M3 screw to a heatsink is the standard assembly method. The full-pack construction means the heatsink does not need to be grounded, which can simplify layout in non-isolated topologies.