Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V drain-source, 9 A continuous drain at 25 °C, 280 mOhm Rds(on) at 10 V, 18 nC gate charge, TO-220-3, -55 °C to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 52W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 180µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 807 pF @ 400 V |
The 807 pF input capacitance at 400 V drain is low enough that the gate driver's output impedance, not the MOSFET's Ciss, typically sets the switching edge rate.
The laser-etched marking on the TO-220 body should trace cleanly to Infineon's factory output — any lot with a font mismatch or sanded surface warrants decap inspection.