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Infineon Technologies IPP60R280CFD7XKSA1
Infineon Technologies

IPP60R280CFD7XKSA1 CoolMOS™ CFD7 N-Ch 650V 9A TO-220-3

MPNIPP60R280CFD7XKSA1
End of Life

Infineon CoolMOS™ CFD7, N-Channel MOSFET, 650 V drain-source, 9 A continuous drain at 25 °C, 280 mOhm Rds(on) at 10 V, 18 nC gate charge, TO-220-3, -55 °C to 150 °C.

$2.8Ref. price · indicative, final on quote
IPP60R280CFD7XKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP60R280CFD7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CFD7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 180µA
Rds on (Max) @ id, vgs280mOhm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds807 pF @ 400 V

Product details

Temperature grade and environment

The IPP60R280CFD7XKSA1: The 52 W maximum power dissipation at case temperature assumes an infinite heatsink; in practice the TO-220 tab must be bolted to a thermal pad or heat spreader sized for the application's ambient and airflow. The 807 pF input capacitance at 400 V drain is low enough that the gate driver's output impedance, not the MOSFET's Ciss, typically sets the switching edge rate.

Sourcing and compliance

The laser-etched marking on the TO-220 body should trace cleanly to Infineon's factory output — any lot with a font mismatch or sanded surface warrants decap inspection.