75 V, 170 A N-channel HEXFET in D2PAK
The Infineon IRFS3207TRLPBF is a 75 V, 170 A N-channel MOSFET from the HEXFET series, housed in a surface-mount D2PAK (TO-263) package. It is designed for high-current switching applications where low on-resistance and high junction temperature tolerance are required. The 4.5 mOhm max Rds(on) at 75 A and 10 V drive keeps conduction losses low in high-current paths like DC-DC converters, motor drives, and battery management systems. The 170 A continuous drain current rating at 25 °C case temperature gives headroom for pulsed or heavy-load designs, though the actual current in a real board depends on the heatsinking and ambient temperature.
Gate charge and switching speed
The total gate charge is 260 nC at 10 V. The 7600 pF input capacitance at 50 V drain-source factors into the drive circuit design. The drive voltage for achieving the specified Rds(on) is 10 V. The maximum gate-source voltage is ±20 V.
Temperature range and thermal management
The 300 W power dissipation at the case is a theoretical maximum — the real thermal limit depends on the PCB copper area and any attached heatsink. The D2PAK's exposed tab is the primary thermal path; a good solder joint to a large copper pour is essential.
Lifecycle and compliance
Cut Tape quantities are also available for prototyping or low-volume builds.