1.2 kV SiC Schottky — the zero-recovery edge
The Infineon IDH16G120C5XKSA1 is a CoolSiC™+ generation silicon carbide Schottky diode rated for 1200 V reverse voltage and 16 A average rectified current. Its zero reverse recovery time (0 ns trr) eliminates the stored-charge losses that plague silicon ultrafast diodes in hard-switched topologies — no recovery tail, no ringing, no snubber required across the diode.
Forward drop and leakage at 175°C junction
Maximum forward voltage is 1.95 V at 16 A, 25°C junction. Reverse leakage at rated 1200 V is 50 µA — a figure that rises with temperature but stays well below the conduction-loss floor of a comparable silicon diode. The 730 pF junction capacitance at 1 V, 1 MHz matters for Coss-related switching losses in LLC or phase-shifted full-bridge designs.
Through-hole TO-220-2 — thermal and mechanical fit
Housed in a PG-TO220-2-1 through-hole package, the IDH16G120C5XKSA1 mounts into a standard TO-220 footprint. At 16 A continuous, a heatsink is required — the TO-220 tab is the thermal path, and the junction-to-case thermal impedance sets the heatsink size.