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Infineon Technologies IPA075N15N3GXKSA1 — Discrete Semiconductors

Infineon IPA075N15N3GXKSA1 N-Channel MOSFET, 150 V, 43 A

MPNIPA075N15N3GXKSA1
Active

Infineon OptiMOS series, N-Channel MOSFET, 150 V drain-source, 43 A continuous drain at 25°C, 7.5 mOhm Rds(on) at 43 A, 10 V, TO-220-3 Full Pack through-hole, -55°C to 175°C operating junction temperature.

$7.1700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA075N15N3GXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation39W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs7.5mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7280 pF @ 75 V

Product details

150 V, 43 A, 7.5 mOhm — conduction loss floor for 48 V bus designs

The IPA075N15N3GXKSA1: The 7.5 mOhm maximum Rds(on) at 43 A, 10 V sets the conduction loss floor — at full rated current the dissipation is roughly 14 W from Rds(on) alone, which the 39 W package limit must absorb with adequate heatsinking. The 150 V rating gives headroom for 48 V bus transients and 72 V nominal systems.

Gate charge and switching — 93 nC at 10 V

Total gate charge is 93 nC at 10 V. Input capacitance is 7280 pF at 75 V drain-source.

Full-pack TO-220 — isolated tab simplifies mounting

The PG-TO220-FP full-pack package means the metal tab is electrically isolated from the drain, so no insulating pad is needed between the tab and the heatsink. The through-hole leads suit PTH power stages and manual rework.

Frequently asked questions

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