STMicroelectronics STripFET™ II series, STP76NF75, N-Channel MOSFET, 75 V Vdss, 80 A continuous drain, 11 mOhm Rds(on) at 40 A, 10 V gate drive, 160 nC gate charge, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 160 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3700 pF @ 25 V |
The TO-220-3 through-hole package suits point-of-load and bulk power stages where a heatsink is practical.
Gate threshold voltage is 4 V maximum at 250 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on) — logic-level 5 V drive will not fully enhance the channel.
Buyers need to know if they can still source the part for new designs or replacements.
Sourcing buyer needs a distributor with immediate availability to fill BOM line.
If part is unavailable, a direct replacement is needed to avoid redesign.
Design engineer must verify PCB layout compatibility before use.
Buyer evaluates cost against budget and compares across distributors.
Maintenance tech needs quick cross-check for a failed unit replacement.