STP80NF06

STMicroelectronics

STMicroelectronics STripFET™ II series, STP80NF06, N-Channel MOSFET, 60 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 10 V, 150 nC gate charge, TO-220-3 through-hole package.

STMicroelectronics STP80NF06
[IN STOCK] In Stock: 18 pcs
$5.00/ pc

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Technical specifications

STP80NF06 specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation300W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3850 pF @ 25 V

Technical details

STP80NF06
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