STMicroelectronics · MDmesh™ V Series
STMicroelectronics STW42N65M5, MDmesh™ V N-Channel MOSFET, 650 V Vdss, 33 A Id, 79 mOhm Rds(on), TO-247-3, Through Hole, 150°C junction.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 79mOhm @ 16.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4650 pF @ 100 V |
The STW42N65M5: The TO-247-3 through-hole package handles the 190 W dissipation ceiling without a heatsink derating headache — the copper tab solders to the board or clamps to a heatsink, and the junction can run to 150°C.
Total gate charge is 100 nC at 10 V.
