STMicroelectronics STW42N65M5, MDmesh™ V N-Channel MOSFET, 650 V Vdss, 33 A Id, 79 mOhm Rds(on), TO-247-3, Through Hole, 150°C junction.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 79mOhm @ 16.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 100 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4650 pF @ 100 V |
The STW42N65M5: The TO-247-3 through-hole package handles the 190 W dissipation ceiling without a heatsink derating headache — the copper tab solders to the board or clamps to a heatsink, and the junction can run to 150°C.
Total gate charge is 100 nC at 10 V.
Buyers need trusted distributors to source the part quickly and avoid counterfeit.
Pricing directly affects BOM cost and sourcing decisions for procurement.
Stock availability determines lead time and production schedule feasibility.
Engineers need to verify electrical and thermal parameters for design validation.
Buyers and engineers need alternatives when the part is unavailable or to compare costs.
Lifecycle status affects long-term availability and design longevity; techs check before replacement.