Found 60 results for “rf connector” (60 products, 0 articles).
Espressif Systems ESP32-C3-MINI-1U-H4, Series ESP32-C3, RF & Wireless ICs, 802.11b/g/n + Bluetooth v5.0, 150Mbps, 2.412GHz ~ 2.484GHz, 4MB Flash, 384kB ROM, 408kB SRAM, -40°C~105°C, 20.5dBm TX power, 53-SMD Module
Espressif Systems ESP32-C3 series, ESP32-C3-MINI-1U-N4 RF module, 2.4 GHz 802.11b/g/n + Bluetooth v5.0, 150 Mbps data rate, 4MB flash, 53-SMD module, active production.
Espressif Systems ESP32-S2-WROOM-I-N4 WiFi module, 802.11b/g/n, 150Mbps, 2.4GHz, 128kB ROM, 320kB SRAM, U.FL connector, 56-VFQFN exposed pad, -40°C to 125°C.
Espressif Systems ESP32 series, RF & Wireless IC System-in-Package, ESP32-PICO-V3-02, 802.11b/g/n + Bluetooth v4.2, 150Mbps, 2.4GHz, 8MB Flash, 2MB SRAM, -97dBm sensitivity, 19.5dBm output, 48-LFQFN Exposed Pad, Surface Mount, -40°C to 85°C.
Espressif Systems ESP32 series, ESP32-MINI-1U-H4 RF & Wireless IC, 2.4 GHz 802.11b/g/n + Bluetooth v4.2, 4 MB Flash, 536 kB SRAM, 55-SMD Module, -40°C to +105°C.
Espressif Systems ESP32-S3 series RF & Wireless IC, ESP32-S3-MINI-1-N8, 41-SMD Module, 8MB Flash, 2.4GHz 802.11b/g/n + Bluetooth v5.0, 20.5dBm output, PCB trace antenna.
Analog Devices ADF4001BCPZ, Clock Generator (RF), PLL Yes, 200 MHz max, 2.7 V ~ 5.5 V supply, -40°C ~ 85°C, 20-LFCSP (4x4) package, Tray.
Espressif Systems ESP32-S2-WROVER-I-N4R2, ESP32 series, 802.11b/g/n Wi-Fi module, 2.4GHz, 150Mbps, 4MB Flash + 2MB PSRAM, 19.5dBm output, -97dBm sensitivity, U.FL antenna, 56-VFQFN exposed pad.
Espressif Systems ESP32-C3-MINI-1-N4, ESP32-C3 series, 53-SMD Module, 802.11b/g/n + Bluetooth v5.0, 150Mbps data rate, 2.412GHz ~ 2.484GHz, 4MB Flash, 384kB ROM, 400kB SRAM, 20.5dBm TX power, -104dBm sensitivity, -40°C~85°C.
Espressif Systems ESP32 series, 802.11b/g/n + Bluetooth v4.2 +EDR module, 2.4 GHz, 150 Mbps, 4MB Flash, 536KB SRAM, U.FL antenna, 55-SMD module, -40 to 85°C.
Espressif Systems ESP32 series, WiFi module, 2.4GHz, 150Mbps, 4MB Flash + 2MB PSRAM, 19.5dBm output, -97dBm sensitivity, 40-SMD module, surface mount.
Espressif Systems ESP32-C3-MINI-1-H4-ES, ESP32-C3 series, module with PCB trace antenna, 4MB Flash, 384kB ROM, 400kB SRAM, 2.412GHz ~ 2.484GHz, 20.5dBm output, -98dBm sensitivity, -40°C to 105°C
Espressif Systems ESP32 series, ESP32-C3-WROOM-02U-N4, 19-SMD module, 2.4 GHz 802.11b/g/n + Bluetooth v5.0, 150 Mbps data rate, 4 MB flash, 408 kB SRAM, PCB trace antenna, 20.5 dBm output, -40°C to 105°C operation.
Espressif Systems ESP32-S2-SOLO-U-N4R2, ESP32 series, WiFi module, 802.11b/g/n, 150Mbps, 2.4GHz, 4MB Flash, 2MB PSRAM, 40-SMD module, PCB Trace + IPEX antenna.
Espressif Systems ESP32-C3 series, ESP32-C3-MINI-1-H4, 53-SMD module, WiFi 802.11b/g/n + Bluetooth v5.0, 150 Mbps PHY, PCB trace antenna, 4 MB flash, 384 kB ROM, 408 kB SRAM, 20.5 dBm TX power, -40°C to 105°C
Espressif Systems ESP32-S2 series, WiFi module, ESP32-S2-MINI-1U-N4R2, 6MB Flash, 336kB SRAM, 2.4GHz, 802.11b/g/n, 150Mbps, U.FL antenna, 65-SMD Module.
Espressif Systems ESP32-S2-SOLO-U-N4 WiFi module, 2.4 GHz 802.11b/g/n, 150 Mbps data rate, 4 MB Flash, 336 kB SRAM, PCB Trace + IPEX antenna, 40-SMD module, -40 to +85 °C.
Espressif Systems ESP32 series, 802.11b/g/n WiFi module, 150Mbps data rate, 2.4GHz, 4MB Flash + 2MB PSRAM, PCB trace antenna, 56-VFQFN exposed pad, surface mount.
Espressif Systems ESP32-S2-MINI-1U-N4 WiFi module, 802.11b/g/n, 150Mbps, 2.412GHz ~ 2.484GHz, 19.5dBm TX power, -97dBm sensitivity, 128kB ROM, 320kB SRAM, 65-SMD module, -40°C~85°C.
onsemi NUP4202W1T2G Steering (Rail to Rail) TVS diode array, 4 unidirectional channels, 500W peak pulse power, 5V reverse standoff, 3pF capacitance, SC-88/SOT-363 package, -40°C to 125°C.
Texas Instruments TPD1E0B04DPLR, bidirectional Zener ESD protection diode, 0.13 pF capacitance @ 1 MHz, 15 W peak pulse power, 3.6 V reverse standoff, 0201 (0603 Metric) / 2-X2SON package, -40°C to 125°C.
Analog Devices AD9516-1BCPZ-REEL7, Clock Generator, Fanout Distribution, PLL Yes, 1:14 input:output ratio, 2.95 GHz max frequency, CMOS/LVDS/LVPECL outputs, 64-VFQFN Exposed Pad (64-LFCSP-VQ 9x9), -40°C to 85°C, ROHS3 compliant.
Infineon BAS7007E6433HTMA1, dual independent Schottky diode, 70 V reverse, 70 mA average per diode, 100 ps reverse recovery, PG-SOT-143-3D package, surface mount.
Murata Electronics LQH3 series, Drum Core Wirewound Inductor, Shielded, 33 µH, ±20%, 460 mA, 660 mOhm DCR, 1212 (3030 Metric), Surface Mount.
Coilcraft LPS6225-102MRC, LPS6225 Series, Shielded Drum Core Power Inductor, 1 µH, ±20%, 1.65 A, 40 mOhm DCR, 2424 (6060 Metric), AEC-Q200.
Murata Electronics LQH2 series, Drum Core Wirewound Inductor, Shielded, Ferrite Core, 1.8 µH, ±5%, 330 mA, 240mOhm DCR, 1008 (2520 Metric), AEC-Q200.
Infineon BAR6304E6327HTSA1 RF PIN diode, 1 pair series connection, 50V peak reverse, 100 mA max, 1 Ohm @ 10 mA / 100 MHz, 0.3 pF @ 5 V / 1 MHz, 250 mW, SOT-23-3 package, PG-SOT23, active, ROHS3.
Infineon BFP420H6801 NPN RF transistor, 25 GHz transition frequency, 21 dB gain, 1.1 dB noise figure at 1.8 GHz, 60 mA collector current, 210 mW max power, SC-82A SOT-343 surface-mount package.
Infineon BF776H6327 RF NPN transistor, 24 dB gain, 46 GHz transition frequency, 0.8 dB noise figure at 1.8 GHz, 50 mA max collector current, 4.7 V Vceo, SC-82A SOT-343 surface-mount package.
Infineon BFP843H6327 ultra low-noise NPN RF transistor, 24.5dB gain, 0.9dB ~ 1.85dB noise figure @ 450MHz ~ 10GHz, 55mA max collector current, 2.25V Vce breakdown, SOT-343 package, surface mount.
Infineon BFR93AE6327HTSA1 NPN RF transistor, 6 GHz transition frequency, 12 V VCEO, 90 mA Ic, 9.5 dB to 14.5 dB gain, SOT-23-3 package, 150 °C junction temperature.
Infineon BAT1504RE6152HTSA1 RF Schottky diode, dual series pair, 110 mA max, 4V peak reverse, 0.25pF capacitance, SOT-23-3 package, 150°C junction temp, ROHS3 compliant.
Espressif Systems ESP32 series, RF & Wireless IC, 802.11b/g/n, Bluetooth v4.2 +EDR, 2.4GHz, 8MB Flash, 2MB PSRAM, 53-SMD Module, PCB Trace antenna.
Espressif Systems ESP32 series, RF & Wireless IC, ESP32-PICO-V3, 2.412GHz ~ 2.484GHz, 150Mbps, 520kB SRAM, 448kB ROM, 48-TFQFN Exposed Pad.
Infineon Technologies BFR106E6327HTSA1 NPN RF transistor, 15V Vceo, 5GHz fT, 8.5dB ~ 13dB gain, 1.8dB ~ 3dB noise figure, 700mW, SOT-23-3.
Infineon Technologies BFP740ESDH6327XTSA1 RF NPN transistor, 45 GHz transition frequency, 160 mW max power, SC-82A SOT-343 package, surface mount.
Analog Devices MAX2602ESA+ NPN RF transistor, 15V Vceo, 1GHz fT, 11.6dB gain, 3.3dB NF @ 836MHz, 1.2A Ic, 8-SOIC-EP, Tube.
Infineon BAR66E6327HTSA1 PIN diode, 1 pair series connection, 150V peak reverse, 200 mA max, 1.8Ω @ 5mA/100MHz, 0.6pF @ 35V/1MHz, 250 mW, SOT-23-3 package, active.
Infineon Technologies BFP760 series RF NPN transistor, SC-82A SOT-343 package, 45 GHz transition frequency, 0.5 dB noise figure, 240 mW max power, surface mount.
Infineon Technologies BFS483H6327XTSA1 RF transistor, dual NPN, 12V, 65mA, 8GHz transition frequency, 19dB gain, SOT-363 surface-mount package.
Infineon BFR193WH6327XTSA1 RF NPN transistor, 12V Vce, 80 mA Ic, 8 GHz fT, 10.5 dB ~ 16 dB gain, 1 dB ~ 1.6 dB noise figure @ 900 MHz ~ 1.8 GHz, 580 mW, SOT323, surface mount.
Infineon BFP620H7764XTSA1 NPN RF transistor, 65 GHz fT, 21.5 dB gain, 0.7–1.3 dB noise figure, 2.8 V Vceo, 80 mA Ic, 185 mW max power, SC-82A SOT-343 package, surface mount, active.
Infineon BFP181E7764HTSA1 NPN RF transistor, 12V Vceo, 8GHz fT, 17.5dB ~ 21dB gain, 0.9dB ~ 1.2dB noise figure @ 900MHz ~ 1.8GHz, 175mW max power, PG-SOT-143-3D package.
Infineon BFP842ESDH6327XTSA1 NPN RF transistor, 60 GHz fT, 26 dB gain, 0.65 dB noise figure at 3.5 GHz, 3.7 V Vce breakdown, 40 mA Ic max, 120 mW power, SC-82A/SOT-343 package, surface mount.
Infineon BFP740FESDH6327XTSA1 NPN RF transistor, 47 GHz transition frequency, gain 9 dB ~ 31 dB, noise figure 0.5 dB ~ 1.45 dB, 4.7 V Vceo, 45 mA Ic, 160 mW max power, 4-TSFP surface-mount package, ROHS3 compliant, active.
Infineon BFR181E6327HTSA1 NPN RF transistor, 12 V Vceo, 8 GHz transition frequency, 18.5 dB gain, 0.9 dB noise figure, SOT-23-3 package.
Infineon BFR182WH6327XTSA1 NPN RF transistor, 12 V VCEO, 35 mA Ic, 8 GHz fT, 19 dB gain, 0.9 dB noise figure at 900 MHz, 250 mW max power, SC-70/SOT-323 package, surface mount.
Infineon BFP193WH6327XTSA1 NPN RF transistor, 8 GHz transition frequency, 13.5-20.5 dB gain, 1 dB noise figure at 900 MHz, 580 mW max power, SC-82A/SOT-343 package, surface mount.
Infineon BFP650FH6327XTSA1 NPN SiGe RF transistor, 42 GHz transition frequency, 11 dB to 21.5 dB gain, 0.8 dB to 1.9 dB noise figure, 4.5 V Vceo, 150 mA Ic, 4-TSFP surface-mount package, ROHS3 compliant.
Infineon BFP183WH6327XTSA1 RF NPN transistor, 12V Vceo, 8.5GHz fT, 22dB gain, 0.9dB noise figure, SC-82A SOT-343 package, surface mount.
Infineon BFP650H6327XTSA1 NPN RF transistor, 4.5 V Vce, 37 GHz fT, 150 mA Ic, 500 mW max power, gain 10.5 dB ~ 21.5 dB, SC-82A/SOT-343, surface mount.
Infineon BFS481H6327XTSA1 RF transistor, dual NPN, 8 GHz transition frequency, 20dB gain, 0.9–1.2dB noise figure, 12V VCEO, 20mA Ic, SOT-363 package.
Infineon BFP460H6327XTSA1 NPN RF transistor, 5.8 V Vceo, 22 GHz fT, 12.5 dB ~ 26.5 dB gain, 0.7 dB ~ 1.2 dB noise figure, 230 mW max, SC-82A (SOT-343) package, surface mount, ROHS3 compliant.
Infineon BFR740L3RHE6327XTSA1 NPN RF transistor, 42 GHz transition frequency, 24.5 dB gain, 0.5 dB noise figure, 4.7 V Vceo, 30 mA Ic, 160 mW, SC-101/SOT-883 TSLP-3 package, surface mount.
Infineon Technologies BFR340L3E6327XTMA1 NPN RF transistor, 14 GHz transition frequency, 17.5 dB gain, 1.15 dB noise figure, PG-TSLP-3-1 package, 9 V Vceo, 10 mA Ic.