45 GHz fT SiGe:C RF transistor for LNA and driver stages
The BFP740ESDH6327XTSA1: Noise figure spans 0.55 dB to 1.8 dB across 150 MHz to 10 GHz, making the part suitable for receiver front-ends where the first-stage NF directly sets the system noise floor. Gain is bias-dependent across an 8.5 dB to 30.5 dB range, so the same device can serve as a low-gain buffer or a high-gain preamp depending on collector current setting.
Breakdown voltage, bias current, and thermal limits
Collector-emitter breakdown is 4.7 V maximum, which limits the supply rail to 3.3 V or 2.8 V with margin — a 5 V rail exceeds the Vceo rating and risks avalanche breakdown. Maximum collector current is 45 mA, and the 160 mW power dissipation ceiling in the SOT-343 package means the product of Vce × Ic must stay under this limit across the operating temperature range. DC current gain is a minimum of 160 at 25 mA, 3 V, confirming the transistor is biased well into its active region at that operating point.
SOT-343 footprint and supply format
Available in Tape & Reel (TR) or Cut Tape (CT) formats, the TR option is the standard for automated pick-and-place assembly; CT suits prototype or low-volume builds.
Active production and compliance status
RoHS3 compliant (2011/65/EU + 2015/863), with no exemptions that would restrict use in EU-market equipment.