8 GHz NPN for RF front-ends
The Infineon BFR193WH6327XTSA1 is an NPN RF bipolar transistor in a SOT323 (PG-SOT323) surface-mount package, designed for low-noise amplifier and oscillator stages up to several gigahertz. Its 8 GHz transition frequency and 10.5 dB to 16 dB gain range make it a fit for LNA, driver, and buffer circuits in wireless infrastructure, ISM-band transceivers, and satellite receivers. The noise figure of 1 dB to 1.6 dB at 900 MHz to 1.8 GHz keeps the signal chain clean in the common cellular and ISM bands.
Active status — no LTB risk
The BFR193WH6327XTSA1 carries an Active product status and is ROHS3 compliant. No last-time-buy or end-of-life notice is in effect, so it can be specified into new designs without near-term obsolescence risk. The part ships in Tape & Reel or Cut Tape options, consistent with volume SMT assembly.
Gain staging and noise floor
Gain is specified as 10.5 dB to 16 dB — a spread that reflects bias and frequency dependence. At 900 MHz, the part typically lands near the upper end; at 1.8 GHz it drops toward 10.5 dB. The DC current gain (hFE) is a minimum of 70 at 30 mA, 8 V, so the RF gain is not limited by beta roll-off at moderate bias. Noise figure of 1 dB to 1.6 dB over the same frequency band is competitive for a general-purpose RF transistor in this package class.