8 GHz NPN for RF front-ends
The Infineon BFR193WH6327XTSA1 is an NPN RF bipolar transistor in a SOT323 (PG-SOT323) surface-mount package, designed for low-noise amplifier and oscillator stages up to several gigahertz. Its 8 GHz transition frequency and 10.5 dB to 16 dB gain range make it a fit for LNA, driver, and buffer circuits in wireless infrastructure, ISM-band transceivers, and satellite receivers. The noise figure of 1 dB to 1.6 dB at 900 MHz to 1.8 GHz keeps the signal chain clean in the common cellular and ISM bands.
Active status — no LTB risk
Gain staging and noise floor
Gain is specified as 10.5 dB to 16 dB — a spread that reflects bias and frequency dependence. At 900 MHz, the part typically lands near the upper end; at 1.8 GHz it drops toward 10.5 dB. Noise figure of 1 dB to 1.6 dB over the same frequency band is competitive for a general-purpose RF transistor in this package class.
