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Infineon Technologies BFP650H6327XTSA1 — Discrete Semiconductors

Infineon BFP650H6327XTSA1 NPN RF Transistor, 37 GHz fT

MPNBFP650H6327XTSA1
End of Life

Infineon BFP650H6327XTSA1 NPN RF transistor, 4.5 V Vce, 37 GHz fT, 150 mA Ic, 500 mW max power, gain 10.5 dB ~ 21.5 dB, SC-82A/SOT-343, surface mount.

$0.54Ref. price · indicative, final on quote
Infineon Technologies BFP650H6327XTSA1 datasheet (PDF)
PackagingSC-82A, SOT-343
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BFP650H6327XTSA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown4.5V
Current - collector (Ic)150mA
DC current gain (hFE) (Min) @ ic, vce110 @ 80mA, 3V
Power - max500mW
Frequency - transition37GHz
Operating temperature150°C (TJ)
Gain10.5dB ~ 21.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-82A, SOT-343
Noise figure (dB typ @ f)0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Product details

The 10.5 dB to 21.5 dB gain range lets you bias the transistor for either a low-noise front-end or a medium-gain driver. Noise figure runs 0.8 dB to 1.9 dB at 1.8 GHz to 6 GHz, which keeps the cascaded noise figure tight in a multi-stage LNA. The 37 GHz fT gives you usable gain well into the 6 GHz band with enough headroom for 5G NR sub-6 GHz or Ku-band downconverters with external matching.

Infineon lists the BFP650H6327XTSA1 as Active with a ROHS3 compliance status. For volume or scheduled releases, a lead-time quote is provided on request.

Frequently asked questions

What is the closest functional equivalent to BFP650H6327XTSA1?

The BFP640FH6327XTSA1 is a close peer — same NPN type, similar package, with a 23 dB gain and 40 GHz fT. It is a direct alternative for designs that can tolerate slightly different bias conditions.