22 GHz NPN RF transistor for low-noise front ends
The Infineon BFP460H6327XTSA1 is a silicon NPN RF bipolar transistor designed for low-noise amplification from VHF through C-band. Its 22 GHz transition frequency (fT) and noise figure as low as 0.7 dB at 100 MHz make it a fit for receiver front ends, LNA stages, and oscillator buffer circuits where gain flatness across a wide band matters.
The 12.5 dB to 26.5 dB gain range is bias-dependent; you trade collector current for gain and noise figure. At 20 mA Ic and 3 V Vce the minimum hFE is 90, which gives enough beta headroom for a single-stage LNA without cascode. The 0.7 dB noise figure at 100 MHz drops to 1.2 dB at 3 GHz — still competitive for 2.4 GHz ISM-band and 5 GHz WLAN front ends. The 230 mW power dissipation limit means the part runs warm at 70 mA continuous; keep the collector current below 50 mA for reliable operation in a 150 °C junction environment.
Package and footprint — SC-82A (SOT-343)
Housed in the 4-lead SC-82A (SOT-343) package, the BFP460H6327XTSA1 occupies about 2.0 mm × 2.1 mm board area. The PG-SOT343-3D variant has a center collector pad that improves thermal conduction to the PCB — stitch a via under the pad to the ground plane for heat sinking. Standard reflow profile for MSL 1 (no bake needed if the sealed bag is intact) applies.
Lifecycle and compliance
The ROHS3 compliance covers the lead-free solder finish — no separate lead-free version exists.