RF front-end NPN in SOT323 — 8 GHz fT, 19 dB gain
The Infineon BFR182WH6327XTSA1 is an NPN silicon RF bipolar transistor designed for low-noise amplifier and driver stages up to the low-GHz range. It delivers a typical gain of 19 dB with a transition frequency of 8 GHz, making it a fit for cellular, ISM-band, and GPS receiver front-ends. The noise figure runs 0.9 dB to 1.3 dB across 900 MHz to 1.8 GHz, which keeps the LNA noise contribution low in a 50 Ω system. Collector current is rated to 35 mA maximum, and the 12 V collector-emitter breakdown voltage gives headroom for a 3 V to 5 V supply rail with margin.
Package and mounting — SC-70 / SOT-323
Housed in a three-lead SC-70 (SOT-323) package, the BFR182WH6327XTSA1 is a surface-mount device with a small footprint — about 2.0 mm × 1.25 mm. The supplier device package is PG-SOT323. The 250 mW power dissipation limit means the part is intended for small-signal stages, not output drivers.
Temperature rating and bias conditions
The junction temperature rating goes to 150 °C, which is standard for commercial and industrial RF stages — no special derating needed for ambient up to 85 °C as long as the collector current stays within the 35 mA ceiling. The DC current gain (hFE) is specified at 70 minimum when biased at 10 mA collector current and 8 V collector-emitter voltage. That gain floor is enough for a single-stage LNA with resistive feedback; for higher gain per stage, the BFR181 sibling (also 19 dB gain) offers a similar bias point at a lower 175 mW power rating.