Dual NPN RF transistor for LNA and driver stages
The Infineon BFS481H6327XTSA1 is a dual NPN RF transistor in a SOT-363 package, rated for 8 GHz transition frequency and 20 dB gain. It targets low-noise amplifier front-ends, driver stages, and oscillator buffer circuits from 900 MHz through 1.8 GHz, where the noise figure sits at 0.9 dB to 1.2 dB across that band. Collector current is rated to 20 mA maximum, collector-emitter breakdown at 12 V, and maximum power dissipation at 175 mW. The dual-transistor configuration saves board space and matches pairs for gain symmetry in differential or cascode layouts.
Lifecycle and compliance
No end-of-life notice or last-time-buy schedule applies. The part is available through independent distribution and quoted to order against an RFQ.