Infineon Technologies BFR740L3RHE6327XTSA1 — DC-DC Power Modules
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Infineon Technologies / DC-DC Power Modules

Infineon BFR740L3RHE6327XTSA1 RF NPN Transistor, 42 GHz

MPN BFR740L3RHE6327XTSA1
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Infineon BFR740L3RHE6327XTSA1 NPN RF transistor, 42 GHz transition frequency, 24.5 dB gain, 0.5 dB noise figure, 4.7 V Vceo, 30 mA Ic, 160 mW, SC-101/SOT-883 TSLP-3 package, surface mount.

In Stock: 6,174 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case SC-101, SOT-883

Full Technical Specifications

12 Parameters
BFR740L3RHE6327XTSA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown4.7V
Current - collector (Ic)30mA
DC current gain (hFE) (Min) @ ic, vce160 @ 25mA, 3V
Power - max160mW
Frequency - transition42GHz
Operating temperature150°C (TJ)
Gain24.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-101, SOT-883
Noise figure (dB typ @ f)0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
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Technical Details & Description

42 GHz SiGe RF transistor for low-noise front ends

The Infineon BFR740L3RHE6327XTSA1 is an NPN silicon-germanium RF transistor in a TSLP-3 leadless package, designed for low-noise amplifier stages up to C-band. Its 42 GHz transition frequency and 24.5 dB gain make it a strong candidate for the first LNA in a receiver chain where noise figure dominates the cascade budget. Noise figure runs 0.5 dB to 0.8 dB across 1.8 GHz to 6 GHz, so at 6 GHz the typical NF is 0.8 dB — that is the figure a repair tech or design engineer needs for link-budget calculations at the top of the band. The 4.7 V collector-emitter breakdown and 30 mA maximum collector current set the supply and bias headroom. The 160 mW power limit means the device stays in the small-signal regime.

Package and mounting — TSLP-3 land pattern

The SC-101 / SOT-883 package (PG-TSLP-3) is a 3-pin leadless plastic package. It is a surface-mount device intended for reflow soldering. The leadless package relies on the PCB pad for heat sinking — a thermal via under the collector pad is recommended for sustained operation near the power limit.

Frequently asked questions

What are equivalent parts to BFR740L3RHE6327XTSA1?

The closest functional peer is the Infineon BFP640FH6327XTSA1, which offers 23 dB gain and 40 GHz fT in a similar leadless package, with a noise figure of 0.65 dB to 1.2 dB across the same band. The BFP640 is a direct cross-shop candidate for the same LNA socket, though the BFR740L3 has a slight edge in gain and noise figure at the top end of the band.

What is the maximum operating frequency of BFR740L3RHE6327XTSA1?

The transition frequency (fT) is 42 GHz, meaning the transistor provides useful gain well into C-band. Practical amplifier designs typically use it up to 6 GHz or so, where the noise figure is still under 1 dB.

Can I get BFR740L3RHE6327XTSA1 in cut tape or reel?

Yes, the part is available in both Tape & Reel (TR) and Cut Tape (CT) options, covering production reels and prototype quantities.

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