42 GHz SiGe RF transistor for low-noise front ends
The Infineon BFR740L3RHE6327XTSA1 is an NPN silicon-germanium RF transistor in a TSLP-3 leadless package, designed for low-noise amplifier stages up to C-band. Its 42 GHz transition frequency and 24.5 dB gain make it a strong candidate for the first LNA in a receiver chain where noise figure dominates the cascade budget. Noise figure runs 0.5 dB to 0.8 dB across 1.8 GHz to 6 GHz, so at 6 GHz the typical NF is 0.8 dB — that is the figure a repair tech or design engineer needs for link-budget calculations at the top of the band. The 4.7 V collector-emitter breakdown and 30 mA maximum collector current set the supply and bias headroom. The 160 mW power limit means the device stays in the small-signal regime.
Package and mounting — TSLP-3 land pattern
The SC-101 / SOT-883 package (PG-TSLP-3) is a 3-pin leadless plastic package. It is a surface-mount device intended for reflow soldering. Junction temperature is rated to 150 °C, which gives margin in hot environments like a base-station radio head or an outdoor small-cell enclosure. The leadless package relies on the PCB pad for heat sinking — a thermal via under the collector pad is recommended for sustained operation near the power limit.
Sourcing and lifecycle — active production, no LTB clock
The BFR740L3RHE6327XTSA1 carries an Active product status from Infineon and is ROHS3 compliant. There is no last-time-buy or end-of-life notice on this part, so it is safe to qualify into a new BOM without worrying about a short production window.