Infineon BFP181E7764HTSA1 NPN RF transistor, 12V Vceo, 8GHz fT, 17.5dB ~ 21dB gain, 0.9dB ~ 1.2dB noise figure @ 900MHz ~ 1.8GHz, 175mW max power, PG-SOT-143-3D package.
| Parameter | Value |
|---|---|
| Mounting type | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 12V |
| Current - collector (Ic) | 20mA |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 70mA, 8V |
| Power - max | 175mW |
| Frequency | 8GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 17.5dB ~ 21dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-253-4, TO-253AA |
| Noise figure (dB typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
The BFP181E7764HTSA1 comes in a PG-SOT-143-3D package. It is a surface-mount device; the collector tab on the bottom side needs a thermal via or copper pour to keep junction temperature under the 150°C (TJ) absolute maximum.
Infineon lists the BFP181E7764HTSA1 as Active with ROHS3 compliance. The ROHS3 compliance covers the current EU exemption list, so no special handling documentation is needed for shipping into restricted markets.
The BFR181WH6327XTSA1 is a close functional peer with similar gain (19dB), same 8GHz fT, same 12V Vceo, and comparable noise figure. It shares the same SOT-143 footprint and is also active. The BFP193E6327HTSA1 offers higher power handling (580mW) but lower gain (12dB to 18dB) — a trade-off for driver stages rather than low-noise front-ends.