Package and mounting — PG-SOT-143-3D
The BFP181E7764HTSA1 comes in a PG-SOT-143-3D package.
The ROHS3 compliance covers the current EU exemption list, so no special handling documentation is needed for shipping into restricted markets.
Infineon BFP181E7764HTSA1 RF NPN Transistor, 8GHz fT
MPNBFP181E7764HTSA1
End of Life
Infineon BFP181E7764HTSA1 NPN RF transistor, 12V Vceo, 8GHz fT, 17.5dB ~ 21dB gain, 0.9dB ~ 1.2dB noise figure @ 900MHz ~ 1.8GHz, 175mW max power, PG-SOT-143-3D package.
$0.43Ref. price · indicative, final on quote
PackagingTO-253-4, TO-253AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 12V |
| Current - collector (Ic) | 20mA |
| DC current gain (hFE) (Min) @ ic, vce | 70 @ 70mA, 8V |
| Power - max | 175mW |
| Frequency - transition | 8GHz |
| Operating temperature | 150°C (TJ) |
| Gain | 17.5dB ~ 21dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-253-4, TO-253AA |
| Noise figure (dB typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
Product details
Frequently asked questions
What is the closest functional equivalent to BFP181E7764HTSA1?
The BFR181WH6327XTSA1 is a close functional peer with similar gain (19dB), same 8GHz fT, same 12V Vceo, and comparable noise figure. It shares the same SOT-143 footprint and is also active. The BFP193E6327HTSA1 offers higher power handling (580mW) but lower gain (12dB to 18dB) — a trade-off for driver stages rather than low-noise front-ends.