The Infineon BFP843H6327 is an ultra low-noise NPN bipolar RF transistor. Noise figure is 0.9 dB at 450 MHz and 1.85 dB at 10 GHz. Gain is 24.5 dB. Maximum collector current is 55 mA; collector-emitter breakdown voltage is 2.25 V.
Package and footprint — SOT-343
The BFP843H6327 comes in a SOT-343 package. Supplier device package is SOT-343. Mounting type is surface mount.
Gain and noise — the numbers that matter
Gain is 24.5 dB. Noise figure is 0.9 dB typical at 450 MHz and 1.85 dB at 10 GHz. DC current gain (hFE) minimum is 150 at 15 mA, 1.8 V. Maximum power dissipation is 125 mW.
No end-of-life notice, no last-time-buy date.