The Infineon BFR93AE6327HTSA1 is an NPN silicon RF transistor in a standard SOT-23-3 surface-mount package, designed for low-noise amplifier and driver stages up to several gigahertz. With a transition frequency of 6 GHz and a collector current rating of 90 mA, it suits VCO buffers, LNA front-ends, and small-signal gain blocks in wireless infrastructure, ISM-band radios, and satellite receivers. The 12 V collector-emitter breakdown voltage keeps it compatible with common 5 V and 8 V regulated rails, and the 150 °C junction temperature rating allows operation in warm enclosures without derating.
The gain range of 9.5 dB to 14.5 dB (device-dependent, bias and frequency dependent) and noise figure of 1.5 dB to 2.6 dB at 900 MHz to 1.8 GHz place this transistor in the moderate-gain, moderate-NF tier — adequate for a second LNA stage or a driver where the first-stage NF is already set by a lower-noise device. The 6 GHz fT gives enough current-gain bandwidth product to keep phase shift low at 2.4 GHz, which matters for loop stability in tuned amplifiers.
Supplied in the PG-SOT23 package (TO-236-3 / SC-59 / SOT-23-3 footprint), this is a three-lead surface-mount device. The collector is the centre pin; the emitter and base are the outer pins. Standard SOT-23 reflow profiles apply. The tape-and-reel option is the common procurement form for volume placement.
It is fully RoHS3 compliant, which simplifies qualification for EU and global markets. No last-time-buy risk is known at this time.